Abstract:Sub-mm circuit design requires accurate on-wafer characterization of passive and active devices. In industry, characterization of these devices is often performed with off-wafer short-open-load-thru (SOLT) calibration. In this paper, the validity of this characterization procedure above 110GHz is investigated by an exhaustive study of on-wafer and alumina off-wafer calibration using measurement and electromagnetic (EM) simulation up to 500GHz. The EM simulation is performed at two different levels, first at the intrinsic level of the devices under test for reference and afterward up to the probe level to simulate different standards used in the off-wafer calibration or in the on-wafer calibration in the presence of the probe. Furthermore, EM simulation data are calibrated with the same procedures and tools that are used in the measurement; therefore, it includes the probe-to-substrate coupling. In addition, precise EM model of a commercial impedance standard substrate is developed and used to perform the SOLT calibration. A good agreement is observed between measurement and EM modeling for the off-wafer calibration as well as for the on-wafer calibration. Results clearly highlight a limitation of alumina off-wafer methodology above 200GHz for characterization of silicon-based technologies. Finally, a discussion is given on the pros and cons of the off-wafer and on-wafer methodologies.

An Improved On-Wafer Measurement Method for PHEMT Modeling for Millimeter Wave Application

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

A New Meshing Criterion for the Equivalent Thermal Analysis of GaAs PHEMT MMICs.

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Equivalent method of GaAs PHEMT MMIC for thermal simulation

A Novel Four-Port Symmetric Probe Calibration Method for On-Wafer S-Parameter Measurement

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers

A Novel Four-Port Calibration Method for High Frequency On-Wafer S-parameter Measurement

Research on Calibration Method of On-wafer Power

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

An Approach for Extracting Small-Signal Equivalent Circuit of Double Heterojunction δ-Doped PHEMTs for Millimeter Wave Applications

Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

A New SOLT Calibration Method for Leaky On-Wafer Measurements Using a 10-Term Error Model

AN EQUIVALENT CIRCUIT MODELING METHOD FOR ULTRA-WIDEBAND ANTENNAS

Nondestructive Measurement and High-Precision Evaluation of the Electrical Conductivity of Doped GaAs Wafers Using Microwaves.

De-embedding and electromagnetic simulation calibration of on-wafer passive devices for millimeter wave integrated circuit design support

One-tier device de-embedding using on-wafer line-series-shunt calibration

Asymmetrical De-Embedding Method for Millimeter-Wave On-Wafer Measurement