Abstract:High accuracy radio-frequency (RF) measurements typically require a calibration to remove the undesired effects of the measurement apparatus. The calibration consists of measuring some combination of known standards such as short, open, load, through, and delay. When measurements are performed on-wafer for silicon RF integrated circuits (RFICs), a two-step calibration/de-embedding technique is typically used. First, the measurement system is calibrated to a reference plane located at the probe tips through measurement of calibration standards fabricated on an impedance-standard substrate. Second, on-wafer de-embedding standards are measured in an attempt to shift the reference plane to the terminals of the device under test (DUT). While significant effort has gone into the development of improved on-wafer de-embedding schemes, discrepancies between actual and de-embedded data still exist. In this article, we first discuss a specific case (a spiral inductor on silicon) for which there was a significant discrepancy between measurement and analysis. The problem is found to be with the measurement. This problem is detailed, and a technique we call "synthetic calibration" is described that can be used with any electromagnetic (EM) analysis to quantify calibration error for any proposed set of calibration standards. Due to the high expense and time required for wafer fabrication, it is important to successfully complete such a calibration validation prior to tape-out.

A New SOLT Calibration Method for Leaky On-Wafer Measurements Using a 10-Term Error Model

A New SOLT Calibration Method for Leaky On-Wafer Measurements Using a 10-Term Error Model

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

A Novel Four-Port Symmetric Probe Calibration Method for On-Wafer S-Parameter Measurement

A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled Oscillator.

A Novel Four-Port Calibration Method for High Frequency On-Wafer S-parameter Measurement

Sensitivity and Uncertainty Analysis of Nonideal Calibration Standards for 16-Term Error Model

Measurements of Planar Microwave Circuits Using an Improved Trl Calibration Method

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Monte Carlo Analysis of Measurement Uncertainties for On-Wafer Multiline TRL Calibration Including Dynamic Accuracy

Sensitivity Analysis of S-Parameter Measurements Due to Nonideal SOLR Calibration Standards

Research on Calibration Method of On-wafer Power

RF Equivalent‐circuit Model of Interconnect Bends Based on S‐parameter Measurements

Sensitivity Analysis of Calibration Standards for SOLT and LRRM

Four-Port SOLR Calibration Algorithm for Symmetric GSSG Probes

A Method to Determine LRRM Calibration Standards in Measurement Configurations Affected by Leakage

A potentially significant on-wafer high-frequency measurement calibration error

An Improved Line-Reflect-Reflect-Match Calibration With an Enhanced Load Model

Calibrations for Millimeter-Wave Silicon Transistor Characterization