Abstract:The development of high-performance integrated circuit chips and the shrinkage of feature sizes according to Moore’s law bring forward continuously the requirements for low dielectric constant (low-k) materials with various excellent properties in the back-end-of-the-line (BEOL) interconnect. Porous SiCOH films prepared by plasma enhanced chemical vapor deposition (PECVD) through a porogen approach are widely applied to industry and extensively studied. Thermal annealing is an important process for fabricating the porous low-k films, which has a great influence on film structure as well as properties. SiCOH films are deposited by PECVD using tetraethoxysilane and limonene as precursors, and annealed at 450 ℃ for 1.5 h under nitrogen atmosphere. The evolutions of film structure and properties during thermal annealing are revealed, and the reaction mechanism for structure change is also proposed. Fourier transform inferred spectroscopy and solid state nuclear magnetic resonance results show that the as-deposited film is an organic-inorganic hybrid film composed of various kinds of Si-O-Si, -CHx, Si-O-CH2CH3, etc. The organic component is removed almost completely during thermal annealing, making a porous film with a Si-O-Si inorganic skeleton. The skeleton is also rearranged at the same time. Deconvolution of the Si-O-Si absorption band of the FTIR spectrum reveals that the cage-like Si-O-Si occupies the major part for both as-deposited and annealed films, while the amount of silicon suboxide Si-O-Si decreases and that of network Si-O-Si increases during thermal annealing, making the film more robust. More C=C and Si-C are formed through chemical reactions between Si-H, -CHx and Si-O-CH2-CH3, and crosslinking is further enhanced. Nitrogen adsorption/desorption isothermal measurement reveals that a large number of micropores with diameter less than 2-3 nm are created during thermal annealing, which is consistent with the removal of organic groups and the existence of cage-like Si-O-Si. As a result, both the refractive index and dielectric constant decrease significantly from 1.476 (λ =630 nm) and 3.45 to 1.365 and 2.60, respectively. Because of the increase of C=C after annealing, extinction coefficient and leakage current density increase. Although there is a shrinkage of 14.7% in film thickness and a reduction of mechanical properties after annealing, the Young’s modulus is still larger than 4 GPa. Considering all kinds of properties, the obtained film appears to be a competitive candidate as inter layer dielectrics in the BEOL interconnect of integrated circuits.

Effects Of Deposition Pressure On Properties Of Carbon-Doped Silicon Oxide Low Dielectric Constant Films

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Study of Oxygen Influences on Carbon Doped Silicon Oxide Low K Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Influence of Deposition Parameters on Optical Properties of Silicon Oxycarbide Thin Films

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

Role of Oxygen Pressure During Pulsed Laser Deposition on the Electrical and Dielectric Properties of Antiferroelectric Lanthanum-Doped Lead Zirconate Stannate Titanate Thin Films

Annealing effects on the structural and electrical properties of SiOC(-H) films with low dielectric constant prepared by plasma-enhanced chemical vapor deposition

Effects of Deposition Pressure on Nanocrystalline Silicon Thin Film by Magnetron Sputtering

Effect Of Sputtering Pressure On The Structure And Properties Of Sio2 Films Prepared By Magnetron Sputtering

Chemical Structure Evolution of SiOCH Films with Low Dielectric Constant During PECVD and Postannealing

[The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films].

Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Opto-electrical properties of amorphous silicon carbide thin films adjustably prepared by magnetron sputtering at room temperature

Effect of Thermal Annealing on the Structure and Properties of Plasma Enhanced Chemical Vapor Deposited Sicoh Film

Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

Silicon Dioxide Film Deposited by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate

Effects of Composition and Thermal Annealing on the Mechanical Properties of Silicon Oxycarbide Films

Preparation and characterization of low-dielectric-constant F-doped SiOCN films by PECVD