Abstract:The electronic states in quaternary GaInAsSb/AlGaAsSb strained quantum well (QW) structures grown by molecular beam epitaxy have been investigated both theoretically and experimentally. For strained multiple quantum wells (MQWs), strong luminescence, and well-resolved excitonic absorption peaks are observed even at room temperature, which is indicative of the good quality of our quaternary sample. By fitting the experimental results to the theoretical calculations, we find that the light holes are in well regions (type I MQWs) and the conduction band offset ratio . The critical temperature for the excitonic-polariton - mechanical-exciton transition in this quaternary MQW structure was found to be . The measured intersubband absorption of about is in good agreement with the theoretical calculation. The transition from type I MQWs to type II MQWs for light holes is also predicted theoretically. In the photoluminescence spectra the sharp exciton resonances have been attributed to localized excitons for temperature and to free excitons at higher temperatures up to room temperature. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly that of the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. The strength of the exciton - phonon coupling is determined from the linewidth analysis. The inhomogeneous linewidth and homogeneous broadening in both MQW and single-quantum-well (SQW) structures have been discussed. We conclude that the experimental result of stronger exciton - phonon coupling in the quaternary SQW structure will lead to partial ionization of excitons at higher temperatures (above 125 K), in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination.

Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-Parabolic Quantum Well

Electric Field Effect on the Second-Order Nonlinear Optical Properties of Parabolic and Semiparabolic Quantum Wells

Studies on the Second-Order Nonlinear Optical Properties of Parabolic and Semi-parabolic Quantum Wells with Applied Electric Fields

Electro-Optic Effect in A Semi-Parabolic Quantum Well with an Applied Electric Field

Third harmonic generation of a 12–6 GaAs/Ga Al As double quantum well: effect of external fields

Polaron Effects on Third-Harmonic Generation in Cylindrical Quantum-Well Wires

Electric Field Effect on the Linear and Nonlinear Intersubband Refractive Index Changes in Asymmetrical Semiparabolic and Symmetrical Parabolic Quantum Wells

THIRD-HARMONIC GENERATION OF WURTZITEGaN-BASED COUPLING QUANTUM WELLS WITH STRONG BUILT-IN ELECTRIC FIELDS

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Polariton propagation in weak confinement quantum wells

Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well

The Electronic States And The Optical Absorption For An Asymmetrical Quantum Well Applied With An External Electric Field

Effects of external fields and structural parameters on third harmonic generation of GaAs/AlGaAs Manning-like double quantum well structure

Effect of Conduction Band Non-Parabolicity on the Nonlinear Optical Properties in GaAs/Ga1−xAlxAs Double Semi-V-shaped Quantum Wells

Calculation Of Linear And Nonlinear Intersubband Refractive-Index Changes In An Asymmetrical Semiparabolic Quantum Well With Applied Electric Field

Effect of electric field on excitons in wide quantum wells

Linear and Nonlinear Intersubband Optical Properties in A Step Quantum Well with an Applied Electric Field

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field

Optical Properties of Quaternary GaInAsSb/AlGaAsSb Strained Quantum Wells

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

Bound Polarons in Asymmetric Quantum Wells in an Electric Field