Analysis of the Ⅰ-Ⅴ Characteristic of Vanadium Oxide Thin Film

陈超,蒋亚东,吴志明
DOI: https://doi.org/10.16818/j.issn1001-5868.2008.05.025
2008-01-01
Abstract:The Ⅰ-Ⅴ characteristic of vanadium oxide thin film is simulated and analyzed.Combined with the tested Ⅰ-Ⅴ curve,the first important thing is to avoid phase transformation of the film in device applications.For such devices,there is one problem: the port voltage is very low when the vanadium oxide thin film is under constant current bias.It is pointed out that the pulse current bias should be adopted to provide bias,then both the port voltage can be increased to drive the next readout circuit and the phase transformation can be avoided.
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