Abstract:Vanadium oxide thin films with different thicknesses are deposited on Si(100) substrates,which are covered by a layer of Si3N4 films,by reactive DC magnetron sputtering.The thicknesses of the thin films are measured by spectroscopic ellipsometer.The square resistance and temperature coefficient of square resistance of these films are measured by four-point probe measurement.It is observed that the thickness of vanadium oxide thin films plays an important role in the square resistance and temperature coefficient of square resistance of films.Experiments reveal that the electrical characteristics of vanadium oxide thin films are correlated with the film thickness,and the adjustment to the film thickness is an important technique method to control the properties of films.

Thickness Effect on Electrical Characteristics of Vanadium Oxide Thin Films