Preparation and Electrical Properties of a New Kind of NTC Thick-film Thermistor

赵霞妍,袁昌来,黄静月,刘心宇,李擘
DOI: https://doi.org/10.3969/j.issn.1001-2028.2010.02.006
2010-01-01
Abstract:NTC thick-film thermistros were prepared after sintering at 790、800、810 ℃ for 4 h, with new BaCoⅡ0.05 CoⅢ0.1Bi0.85O3 material as the substrate and CuO as the sintering aids. The effects of CuO content on the phase composition, microstructure and electrical properties of thermistors were studied by XRD, SEM and resistance-temperature detector. The results show that the major phase of thermistors sintered at 800 ℃ is BaCoⅡ0.05 CoⅢ0.1Bi0.85O3 with a cubic double perovskite structure, and there is a small amount of Bi2O3 remained in these thermistors containing fine uniform grains; The amount of pores present in these thermistors decreases with increasing CuO content, while the compactness increases. The room temperature resistance R25 and the B25/85 of thermistors sintered at 790℃ decreases with increasing CuO content; And, the R25, B25/85 and activation energy Ea of these thermistors are in ranges of 0.98~13.4 kΩ、931~1 855 K and 0.08~0.16 eV, respectively.
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