Abstract:ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600??C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400??C with a roughness mean square value of about 15?nm and a precipitation of ZnO microcrystals on the deposit surface at 600??C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206?? after treatment at 600??C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the UV emission band after annealing at 200??C. A visible region emission band at 580?nm, ascribed to interstitial oxygen, is observed for the as-grown deposit and decreases as the annealing temperature increases. An emission band appears near 525?nm for samples annealed at 400 and 600??C; this band is ascribed to oxygen vacancies created during annealing treatment. This result is in agreement with the energy dispersive x-ray spectroscopy experiments which revealed loss of oxygen.

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Annealing Temperature Dependence of the Structures and Properties of Co-implanted ZnO Films

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Impact of Rapid Thermal Annealing on Structural and Electrical Properties of ZnO Thin Films Grown Atomic Layer Deposition on GaAs Substrates

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