Abstract:High-density nitrogen plasma was produced using a high-power pulsed power modulator to sputter titanium targets for the preparation of titanium nitride film. The high-power pulsed sputtering discharge unit consisted of two targets facing each other with the same electrical potential. The titanium target plates were used as target materials with dimensions of 60 mm length, 20 mm height, and 5 mm thickness. The gap length was set to be 10 mm. The magnetic field was created with a permanent magnet array behind the targets. The magnetic field strength at the gap between the target plates was 70 mT. The electrons were trapped by the magnetic and electric fields to enhance the ionization in the gap. The nitrogen and argon gases were injected into the chamber with 4 Pa gas pressure. The applied voltage to the target plates had an amplitude from −600 V to −1000 V with 600 μs in pulse width. The target current was approximately 10 A with the consumed power of 13 kW. The discharge sustaining voltage was almost constant and independent of the applied voltage, in the same manner as the conventional normal glow discharge. The ion density and electron temperature at the surface of the ionization region were obtained as 1.7 × 1019 m−3 and 3.4 eV, respectively, by the double probe measurements. The vertical distribution of ion density and electron temperature ranged from 1.1 × 1017 m−3 (at 6 cm from the target edge) to 1.7 × 1019 m−3 and from 2.4 eV (at 6 cm from the target edge) to 3.4 eV, respectively. From the emission spectra, the intensities of titanium atoms (Ti I), titanium ions (Ti II), and nitrogen ions (N2+) increased with increasing input power. However, the intensities ratio of Ti II to Ti I was not affected by the intensities from N2+.

Nitride Formation on Titanium under Irradiation of Intense Pulsed Ion Beam

Properties of Titanium Nitride Fabricated on Stainless Steel by Plasma-Based Ion Implantation/Deposition

Bias voltage influence on surface morphology of titanium nitride synthesized by dynamic nitrogen and titanium plasma immersion ion implantation and deposition

Ionized Physical Vapor Deposition of Titanium Nitride: Plasma and Film Characterization

Surface Modification of Ni3al-Based Alloy Ic6 with Intense Pulsed Ion Beams

Ion-beam Assisted Sputtering of Titanium Nitride Thin Films

Synthesis of Nanopowders of Titanium Nitride by In-Situ Nitridation of Titanium Oxide

Dynamic Nitrogen and Titanium Plasma Ion Implantation/Deposition at Different Bias Voltages

Investigation on Surface Nitridation of Titanium by Pulsed Laser

Characteristics of TiN films deposited on a trench-shaped sample prepared by plasma-based ion implantation and deposition

Anisotropic Phase Transformation Mechanism on Coarse-Grained and Fine-Grained Pure Titanium at Low-Temperature Plasma Nitriding

Production of High-Power Nitrogen Sputtering Plasma for TiN Film Preparation

Plasma Spray Deposition Enhancement of Titanium Nitride Layer Using Nitrogen-Contained Plasma Irradiation of Titanium Substrate as a Pre-spraying Method

Microstructure evolution and nanohardness of nanostructured TiAlN coating under N+ ion irradiation

Surface Modification of LiNbO3 and KTa1−xNbxO3 Crystals Irradiated by Intense Pulsed Ion Beam

Composition and structure of Ti-6Al-4V alloy plasma-based ion implanted with nitrogen

Laser nitriding of titanium surface and TOFMS (time of fight mass spectra) analysis

Macroparticles on titanium nitiride thin film prepared by cathodic-arc plasma-based ion implantation and deposition

Surface Modification of a Ti-2Al-2.5Zr Alloy by N Ion Implantation

Influences of the Irradiation of Intense Pulsed Ion Beam (IPIB) on the Surface of Ni₃Al Base Alloy IC6

Investigation of nitrogen ionization state and its effect on the nitride layer during fiber laser gas nitriding of Ti-6Al-4V alloy