Dynamic Nitrogen and Titanium Plasma Ion Implantation/Deposition at Different Bias Voltages

XB Tian,LP Wang,QY Zhan,PK Chu
DOI: https://doi.org/10.1016/s0040-6090(01)00949-x
IF: 2.1
2001-01-01
Thin Solid Films
Abstract:Titanium oxynitride films were prepared on AISI 304 stainless steel samples employing dual titanium and nitrogen plasmas in an immersion configuration. The vacuum arc source provided the titanium plasma and the nitrogen plasma was sustained by hot filament glow discharge. A 30 μs implantation duration and 270 μs titanium arc duration were used in our plasma ion implantation and deposition (PIID) process. The impact of the implantation voltages (8 kV, 16 kV and 23 kV) on the film was investigated. The treated samples were characterized using Auger electron spectroscopy (AES) and atomic force microscopy (AFM). Our results reveal that the thickness of the coating is not changed significantly by the applied voltage. However, the surface morphology varies substantially with the implantation voltage. The 8-kV sample shows the highest titanium content and a smooth island-shaped surface whereas the 23-kV sample features peaks with sharper edges.
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