Abstract:Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm(2)/V.s to 363.65 cm(2)/V.s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7 x 10(-10) V-2.Hz(-1) and 2.7 x 10(-8) V-2 .Hz(-1), respectively, while the extracted average trap density in the buried oxide increases from 1.42 x 10(17) cm(-3).eV(-1) to 6.16 x 10(18) cm(-3).eV(-1). Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92 x 10(-5) to 1.34 x 10(-2) after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M.rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are 10.82 V and 31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

A 5 nm nitrided gate oxide for 0.25 /spl mu/m SOI CMOS technologies

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Study of Radiation-hard SOI Gate Oxide Reliability

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Study of Radiation Hardened SOI Gate Oxide Reliability

Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Oxide Reliability of SiC MOS Devices

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices

Hot Carrier Reliability of Radiation Hardened T-gate PD SOI NMOSFET after TID Radiation

Hot Carrier Effect and Oxide Reliability of T-FinFET Devices

Growth of Gate Oxides on 4H–SiC by NO at Low Partial Pressures

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process