Abstract:This paper focused on the radiation-hardened SOI technology gate oxide reliability.We compared the gate oxide QBDgrown in dry O2and wet O2,It shows that the gate oxide QBDgrown in dry O2is less than wet O2。We used dry gate oxide with 12.5nm thickness to compare the gate oxide reliability with or without radiation-hard technology,because it is more sensitive.The results show that radiation-hard process decreased gate oxide breakdown voltage and time-to-breakdown.The constant-voltage stressing test was applied to estimate time-dependent dielectric breakdown(TDDB) life of gate oxide with radiation-hard process.the life of 12.5nm gate oxide with radiation-hard process is above 10 years under normal temperature and 5.5V work conditions.It can meet the requirement in the SOI radiation-hard technology.

Study of Radiation Hardened SOI Gate Oxide Reliability