Abstract:The growth of high-quality ZnO bulk crystals is an outstanding challenge, and the nature of grown-in defects in crystals is far from well understood. In this work, a specially designed low-temperature-gradient CVT growth system was developed based on finite element analysis. High-quality ZnO single crystals were successfully grown. The supersaturation front in the growth system was controlled, and internal stress in the crystal was reduced by introducing a radiation baffle and a special seed pedestal. The structural, electrical, and optical properties of ZnO crystals were studied before and after oxygen annealing. The scanning electron microscope (SEM) and optical microscope (OM) results indicate the stable growth is achieved under the Zn-rich growth condition. The X-ray rocking curve measurements reveal the high crystalline quality of the grown crystal with the full-width at half-maximum (FWHM) value of 17 arcsec for the (004) reflection. The time-of-flight secondary ion mass spectroscopy (ToF-SIMS) results prove the high purity of grown crystals and reveal the variations of trace impurity concentrations in crystals. When annealed in oxygen at 1000 °C, the optical band gap (Eg) changes from 2.50 eV to 3.15 eV. The Raman analysis indicates that oxygen vacancies (Vo) in the as-grown crystal disappear after annealing. The Hall measurements show that the room temperature (RT) mobilities before and after annealing are 197 cm2V−1c−1 and 207 cm2V−1c−1, respectively. The RT carrier concentration decreases by about two orders of magnitude to 5.45 × 1015 cm−3, while the RT resistivity increases by about one order of magnitude to 5.57 Ω cm after annealing. The positron annihilation lifetimes (PALS) results prove the presence of Zn vacancies (Vzn) after annealing. The origins of as-grown ZnO green luminescence (GL) and the temperature-dependent blue shifts of the GL peak positions are explained based on Zni and Vo defects. The fine structures of annealed ZnO GL are found to be related to Vzn native defects rather than Cu impurity.

Evolution of Native Point Defects in ZnO Bulk Probed by Positron Annihilation Spectroscopy

Probing defects in chemically synthesized ZnO nanostrucures by Positron Annihilation and Photoluminescence Spectroscopy

Defect study in ZnO related structures—A multi-spectroscopic approach

Probing Defects in ZnO by Persistent Phosphorescence

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Exploring the Interactions of Oxygen with Defective ZnO

Identification of Defect-Related Emissions in ZnO Hybrid Materials

Electronic Band Structures And Native Point Defects Of Ultrafine Zno Nanocrystals

Crystal growth, finite element analysis and oxygen annealing of ZnO bulk crystal grown by low-temperature-gradient chemical vapor transport

Point Defects Analysis of Zinc Oxide Thin Films Annealed at Different Temperatures with Photoluminescence, Hall Mobility, and Low Frequency Noise

Defect Emissions in ZnO Nanostructures

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Cover Feature: Exploring the Interactions of Oxygen with Defective ZnO (chemistryopen 7/2018)

Origin of the Defects-Induced Ferromagnetism in Un-Doped ZnO Single Crystals

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

The effects of intrinsic defects on the structural and optical properties of ZnO thin film prepared via a sol-gel method

Time-Domain Observation of Spectral Diffusion in Defective ZnO

Zinc Vacancy Related Emission in Homoepitaxial N-doped ZnO Microrods

O-O Bonding Stabilized Zinc Vacancy As Origin of P-Type Doping on Σ7 ZnO Grain Boundary

Theoretical Exploration of the Structural, Electronic, and Magnetic Properties of ZnO Nanotubes with Vacancies, Antisites, and Nitrogen Substitutional Defects