An extensive theoretical quantification of secondary electron emission from silicon
M. S. S. Khan,S. F. Mao,Y. B. Zou,D. B. Lu,B. Da,Y. G. Li,Z. J. Ding
DOI: https://doi.org/10.1016/j.vacuum.2023.112257
IF: 4
2023-01-01
Vacuum
Abstract:Though intensive experimental studies have been carried out on electron emission properties in past decades, the reliable data from accurate experimental measurements for clean and smooth surfaces are still quite limited. In this work, we have performed a comprehensive Monte Carlo simulation of electron emission yields, the secondary electron yield (SEY, & delta;), backscattered electron coefficient (BSC, & eta;) and total electron yield (TEY, & sigma; = & delta; + & eta;), from silicon and the uncertainty quantification of the theoretical calculation results for the first time. The simulations were made on total 17280 scattering models. The considered uncertainty factors in the physical modelling that can influence the calculated yields include work function data, optical energy loss function data, dielectric function models for electron inelastic scattering and the scattering potentials for electron elastic scattering. The calculation results show that & delta; is significantly influenced by the work function while the dielectric function model has a slight effect. Elastic scattering potential (or elastic scattering cross section) and energy loss function affects to a certain extent both & delta; and & eta;. Our simulated & eta; data agree with most of the experimental measurements while the simulated mean & delta; data are well below most of the experimental data. At a 75% level of confidence, the experimental & sigma; data measured by Goto et al. lie within the uncertainty range of our simulation results. This work has provided sufficient ground for the necessity of building a theoretical database of electron emission yield considering the fact that most of the previous experimental data are not reliable due to the presence of surface contamination during the measurements.