Abstract:Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods are presented. The calculations aim at a comprehensive, microscopic understanding of the precipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical treatment, basic processes assumed in the precipitation process are calculated in feasible systems of small size. The migration mechanism of a carbon 〈100〉 interstitial and silicon 〈110〉 self-interstitial in otherwise defect-free silicon are investigated using density functional theory calculations. The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically. Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon bonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A rather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions regarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to experimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects and carbon diffusion in silicon are compared to results of classical potential simulations revealing significant limitations of the latter method. An approach to work around this problem is proposed. Finally, results of the classical potential molecular dynamics simulations of large systems are examined, which reinforce previous assumptions and give further insight into basic processes involved in the silicon carbide transition.

Thermodynamic Studies of Carbon in Liquid Silicon Using the Central Atoms Model

Carbon solubility in liquid silicon: A computational analysis across empirical potentials

Atomistic simulations of carbon diffusion and segregation in liquid silicon

Molecular Dynamics Study of the Effect of Carbon Atoms on the Surface Tension of Silicon–carbon Alloy

Calculation of solid–liquid interfacial free energy of silicon based on classical nucleation theory

Dynamics and Diffusion Mechanism of Low-Density Liquid Silicon.

A computational analysis on thermodynamic changes in liquid and solid states of carbon at liquid-liquid phase coexistence temperature

Molecular Simulation of Covalent Bond Dynamics in Liquid Silicon

Coupled Experimental Study and Thermodynamic Modeling of the Fe–Si–N System

Liquid-liquid phase transition in deeply supercooled Stillinger-Weber silicon

Calculating Models of Mass Action Concentration for Thermodynamic Properties of Phosphorus, Iron and Aluminum in Silicon Dilute Solutions

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon

Persistence of Covalent Bonding in Liquid Silicon Probed by Inelastic X-ray Scattering

Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces

Theory of complex fluids in the warm-dense-matter regime, and application to an unusual phase-transitions in liquid carbon

Liquid-Liquid Phase Transition in Supercooled Silicon

EXPERIMENTAL DETERMINATION OF ACTIVITY INTERACTION COEFFICIENTS OF COMPONENTS IN Si-B-Fe AND Si-B-Al TERNARY SYSTEMS AT 1723 K

Thermodynamic Behavior of a Model Covalent Material Described by the Environment-Dependent Interatomic Potential

The Study of Melting Stage of Bulk Silicon Using Molecular Dynamics Simulation

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth