Opacity Studies Of Silicon In Radiatively Heated Plasma

H. G. Wei,J. R. Shi,G. Zhao,Yi Zhang,Quan-Li Dong,Yu-Tong Li,Shou-Jun Wang,Jie Zhang,Zuotang Liang,Ji-Yan Zhang,Tian-Shu Wen,Wen-Hai Zhang,Xin Hu,Shen-Ye Liu,Yong-Kun Ding,Lin Zhang,Yong-Jian Tang,Bao-Han Zhang,Zhi-Jian Zheng,Hiroaki Nishimura,Shinsuke Fujioka,Fei-Lu Wang,Hideaki Takabe
DOI: https://doi.org/10.1086/588750
2008-01-01
Abstract:Measurements of the opacity of silicon at high temperature and high density are reported. A silicon dioxide foam was heated by eight nanosecond laser beams while a backlighter X-ray source was produced with a picosecond laser. Absorptions of the 1-2 transitions of Si XII through Si VI were observed in the wavelength range from 6.6 to 7.1 angstrom. The experimental results are simulated with theoretical calculations under local thermodynamic equilibrium using a detailed level accounting model and can be reproduced in general when the effects of the oxygen in the SiO2 are taken into account.
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