Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

The self-compression of injected electron-hole plasma in silicon

Dense electron-hole plasma in silicon light emitting diodes

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

The Origin of 0.78 Ev Line of the Dislocation Related Luminescence in Silicon

Structural and Luminescent Properties of Electron-Irradiated Silicon

Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon

Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures

Dislocation-related electroluminescence of silicon after electron irradiation

Optically Pumped Mid-Infrared Light Emitter on Silicon

Low-Temperature Photoluminescence of Hydrogen Ion and Plasma Implanted Silicon and Porous Silicon

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

The Origin of Visible Photoluminescence from Silicon Oxide Thin Films Prepared by Dual-Plasma Chemical Vapor Deposition

Laboratory Spectroscopy of Silicon Plasmas Photoionized by Mimic Astrophysical Compact Objects

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Exciton-to-plasma Mott crossover in silicon

Cooperative Recombination of a Quantized High-Density Electron-Hole Plasma