Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

Exciton-to-plasma Mott crossover in silicon

Exciton Mott transition in Si Revealed by Terahertz Spectroscopy

Excitonic Mott transition in type-II quantum dots

Electrical Signature of Excitonic Electroluminescence and Mott Transition at Room Temperature

Many-body effects on excitonic optical properties of photoexcited semiconductor quantum wire structures

Exciton Condensation in an Atomically-thin MoS2 Semiconductor

Ultrafast hot electron-hole plasma photoluminescence in two-dimensional semiconductors

Remote Lightening and Ultrafast Transition: Intrinsic Modulation of Exciton Spatiotemporal Dynamics in Monolayer MoS2.

Keldysh crossover in one-dimensional Mott insulators

Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator

Photoluminescence spectroscopy of hybridized exciton-polariton coupling in silicon nanodisks with nonradiative anapole radiations

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Semiconductor excitons in new light

Excitonic Complexes and Optical Gain in Two-Dimensional Molybdenum Ditelluride Well below Mott Transition

Studies of hot photoluminescence in plasmonically coupled silicon via variable energy excitation and temperature-dependent spectroscopy

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Optical properties of a vibrationally modulated solid state Mott insulator

Excitons in Silicon Nanocrystalites: The Nature of Luminescence

The self-compression of injected electron-hole plasma in silicon