Abstract:Several monolayer transition metal dichalcogenides (TMDs) are direct band gap semiconductors and potentially efficient emitters in light emitting devices. Photons are emitted when strongly bound excitons decay radiatively, and accurate models of such excitons are important for a full understanding of the emission. Importantly, photons are emitted in directions uniquely determined by the exciton center of mass momentum and with lifetimes determined by the exciton transition matrix element. The exciton band structures of two-dimensional hexagonal materials, including TMDs, are highly unusual with coexisting particle- and light-like bands. The latter is non-analytic with emission selection rules essentially opposite to the particle-like states, but has been ignored in analyses of TMD light emission so far. In the present work, we analyse the temperature and angular dependence of light emission from both exciton species and point out several important consequences of the unique exciton band structure. Within a first-principles Density-Functional-Theory+Bethe-Salpeter-Equation framework, we compute exciton band structures and optical matrix elements for the important TMDs MoS2, MoSe2, WS2, and WSe2. At low temperature, only the particle-like band is populated and our results agree with previous work. However, at slightly elevated temperatures, a significant population of the light-like band leads to modified angular emission patterns and lifetimes. Clear experimental fingerprints are predicted and explained by a simple four-state model incorporating spin-orbit as well as intervalley exchange coupling.

Excitonic Mott transition in type-II quantum dots

Coexistence of Nearly Free and Strongly Bound Trions from Magneto-Photoluminescence of Two-Dimensional Quantum Structures with Tunable Electron or Hole Concentration

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

Optical Transitions in Type-Ii InAs∕GaAs Quantum Dots Covered by a GaAsSb Strain-Reducing Layer

Exciton-to-plasma Mott crossover in silicon

Elementary excitations in charge-tunable InGaAs quantum dots studied by resonant Raman and resonant photoluminescence spectroscopy

Bright Type-Ii Photoluminescence from Mn-doped CdS/ZnSe/ZnS Quantum Dots with Mn2+ Ions As Exciton Couplers

Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers

Excitonic Complexes and Optical Gain in Two-Dimensional Molybdenum Ditelluride Well below Mott Transition

Single exciton emission from gate-defined quantum dots

Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides

Coherent spectroscopy of a single Mn-doped InGaAs quantum dot

Bright-To-Dark Exciton Transition in Symmetric Coupled Quantum Wells Induced by an In-Plane Magnetic Field

Quantum-confinement-effect-driven Type-I–type-ii Transition in Inhomogeneous Quantum Dot Structures

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Excitons in Atomically Thin TMD in Electric and Magnetic Fields

Optical Emission from Light-like and Particle-like Excitons in Monolayer Transition Metal Dichalcogenides

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot