Single exciton emission from gate-defined quantum dots

G. J. Schinner,J. Repp,E. Schubert,A. K. Rai,D. Reuter,A. D. Wieck,A. O. Govorov,A. W. Holleitner,J. P. Kotthaus

DOI: https://doi.org/10.48550/arXiv.1204.3199

2012-04-15

Abstract:With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The key problems that this paper attempts to solve are: **How to achieve effective trapping and manipulation of a single indirect exciton (IX) through a quantum dot defined by an electric field, and study the discrete emission lines in the few - exciton regime and the physical mechanisms behind them**.

### Specific Problems and Solutions

1. **Trapping and Manipulation of a Single Indirect Exciton**
- The paper shows that by using nano - scale gate - defined electrostatic traps on a double - quantum - well (DQW) structure, optically active, voltage - tunable quantum dots for a single indirect exciton can be achieved. These quantum dots can trap individual, long - lived, spatially indirect excitons.
- By changing the gate voltage and applying a magnetic field, the state of the quantum dots can be adjusted, including the photoluminescence (PL) energy and lifetime, as well as the number of excitons.

2. **Transition from Multiple Excitons to a Single Exciton**
- The process of transitioning from a multi - exciton state to a single indirect exciton has been studied. In the few - exciton regime, discrete emission lines reflecting the dipole - dipole exciton repulsion and spatial quantization have been observed.
- In this regime, two and three excitons respectively show a molecular - like spatial arrangement, which is caused by the dipole - dipole interaction.

3. **Physical Mechanisms of Discrete Emission Lines**
- Discrete emission lines caused by the dipole - dipole exciton repulsion have been discovered, which reflect the main effects in the behavior of quantum dots.
- Using a simple classical model, this phenomenon can be well described, in which the heavy holes are fixed in space by the gate - induced electrostatic confinement potential, and the light electrons are bound in the adjacent quantum wells through Coulomb attraction.

4. **Application Prospects of Quantum Dot Arrays**
- This scheme introduces a new gate - defined platform for creating and controlling optically active quantum dots, and paves the way for realizing tunable in - plane coupling and the optical properties of voltage - controlled single - charge and - spin states.
- Based on this method, it is possible to envision controlling a single exciton or a quantum dot array in the DQW plane in a quantum information processing circuit.

### Summary
The main objective of the paper is to achieve effective trapping and manipulation of a single indirect exciton through an electric - field - defined quantum dot, and study its discrete emission lines in the few - exciton regime and the physical mechanisms behind them. This research not only provides new insights into the exciton behavior in quantum dots but also lays the foundation for future quantum information processing technologies.