Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)
Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang
DOI: https://doi.org/10.1016/j.vacuum.2010.01.054
2011-01-01
Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.