Abstract:The magneto-transport properties of cubic NiMnAs film epitaxied on the GaAs (110) substrate are investigated. The x-ray diffraction measurements reveal that the NiMnAs (111) crystal plane is parallel to the GaAs (110) crystal plane. The temperature dependence of resistivity at high temperature can be described by a thermal activation model, from which the thermal activation energy is obtained and found to be comparable with many other Heusler alloys. By fitting the temperature dependence of resistivity at low temperature, the coefficient of the quadratic temperature term is determined to be 1.34 × 10-3μΩ cm K-2. This value suggests the possible presence of single-magnon scattering in the NiMnAs film. The negative magnetoresistance is attributed to the suppression of the spin-dependent scattering, which would not take place in a half-metal. The angle dependence of the anisotropic magnetoresistance (AMR) is measured, and the AMR ratios are positive even at low temperature. These magneto-transport properties indicate that the predicted half-metallicity is destroyed in the NiMnAs film. The absence of the half-metallicity may be attributed to the atomic disorder in the NiMnAs lattice, which needs to be confirmed by further experimental and theoretical studies.

Growth and magnetism of Ni films on GaAs(001)

Growth and magnetism of Ni films on GaAs(0 0 1)

Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

Epitaxial Structures and Magnetic Properties of Co100-Xmnx Alloys on Gaas(001) Surface

Growth-Induced Magnetic Anisotropy Behavior in Ni Thin Films

Structure and Magnetism of Co1−xMnx Alloys Epitaxially Grown on GaAs(001)

Magnetic Ordering And Anisotropy Of Epitaxially Grown Fexcu1-X Alloy On Gaas(001)

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Body-centered-cubic Ni and Its Magnetic Properties.

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Magneto-transport properties of cubic NiMnAs film epitaxied on GaAs (110) substrate

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Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

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Epitaxy and magnetism of Co on GaAs(0 0 1)

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