Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

Y. D. Park,A. T. Hanbicki,J. E. Mattson,B. T. Jonker

DOI: https://doi.org/10.1063/1.1498503

2002-05-09

Abstract:We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.

Materials Science