Image Reverse Technique for Research of Metal Lift-Off

Chen De,Wu Zhiming,Li Wei,Wang Jun,Yuan Kai,Jiang Yadong
DOI: https://doi.org/10.3969/j.issn.1003-353x.2009.06.004
2009-01-01
Abstract:Transformation of AZ-5214 photoresist from positive to negative patterns and the technology of producing reversed-trapezoid shape were studied,which was suitable for exfoliation corrosion technique in manufacturing microelectronics devices.SEM and step profiler tests show the reversed-trapezoid shape of photoresist patterns is with 60° obliquity and photoresist thickness is 1.4 μm.Optimum parameters about preparation of reversed-trapezoid patterns are:coating rotation speed is 4 000 r/min,pre-bake is 100 ℃/60 s,exposure time is 0.3 s,reversal bake is 110 ℃/90 s,flood exposure time is 2 s,developing time is 50 s.Metalloscope was used to test the resolution of produced photoresist patterns in optimum parameters,also mechanisms of image reverse was discussed.
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