Abstract:The influence of boron (B)/arsenic (As) on X-ray photoelectron spectroscopy (XPS) study of NiSi formation on shallow junctions is investigated in this paper. The Ni-silicide film was formed after 30s soak anneal at 450°C on ultra shallow p+/n or n+/p junctions. The atomic ratio of Ni/Si profile in depth was probed by XPS and the results show that a uniform NiSi layer forms on B-doped p+/n junction while a non-uniform, Ni-rich silicide layer forms on As-doped n+/p junction. It does not agree with the results of other independent phase identification methods such as X-ray diffraction, Rutherford backscattering spectroscopy, and Raman scattering spectroscopy, which all demonstrate the formation of NiSi on both n+/p and p+/n junctions. Comparing the raw binding energy spectra of Ni and Si for each silicide film, the similar spectra for Ni signals are revealed. But the Si signals with an obviously smaller intensity is found to be responsible for the apparent Ni rich silicide formation on As-doped n+/p junction. It indicates that As atoms in the silicide film can affect the sputtering yield of Ni and Si, while no noticeable effect is observed for B atoms. More As atoms than B atoms segregation into the silicide layer is indeed verified by secondary ion mass spectroscopy. And micro-Raman scattering spectroscopy further confirms that the degree of crystallinity for NiSi on n+/p junction is inferior to that on p+/n junction.

High-resolution Electron Microscopy Studies of Ni Silicides Formed in Lateral Diffusion Couples

In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Electronic Structures and Charge Transfer of Nickel Silicides

Nickel Silicide Formation on Shallow Junctions

In-Situ Observation of the Formation of NiSi/Ni<sub>2</sub>Si Heterojunction in SiGe Nanowire with Al<sub>2</sub>O<sub>3</sub> Diffusion Barrier Layer

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Study of Nickel Silicide Formation on Si(110) Substrate

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

In-Situ Observation of Ni-11.5wt%Si Eutectic Microstructure Evolution and Exploration of Strengthening Mode of Ni-Ni3si Eutectic Composites

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Solid State Interdiffusion Reactions of Ni/Zr Diffusion Couples

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C

Nickel Silicidation On N And P-Type Junctions At 300 Degrees C

Study of nickel silicide formation on Si(1 1 0) substrate

Structural Changes and Peculiarities of Nipdsi Formation Investigated by Raman and Auger Spectroscopy