Temperature Dependent Integrity of Sr0.8Bi2Ta2O9 Films on Ultra-Thin Al2O3 Buffered Si

BC Lan,SY Chen,HY Lee

DOI: https://doi.org/10.1016/s0254-0584(02)00517-5

IF: 4.778

2003-01-01

Materials Chemistry and Physics

Abstract:The annealing temperature dependent integrity of Sr0.8Bi2Ta2O9 (SBT) on ultra-thin 4nm SiO2 and Al2O3 buffered Si was investigated in this work. Although the capacitance–voltage characteristics show hysteresis loops in both cases, the memory window of Sr0.8Bi2Ta2O9/Al2O3 capacitor is larger than that of Sr0.8Bi2Ta2O9/SiO2 capacitor. As increasing annealing temperature from 800 to 900°C, the grain size and memory window of polycrystalline SBT increase both cases. At 800°C, the leakage current density of Sr0.8Bi2Ta2O9/Al2O3 capacitor is 3.2×10−8A/cm2 at −3V, which is low enough for deep sub-μm application. With increasing temperature to 900°C, the leakage current in both structures becomes smaller.