Abstract:Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Scanning Probe Studies of the Electrical Activity at Interfaces Formed by Silicon Wafer Direct Bonding

Scanning Probe Imaging of Surface Ion Conductance in an Anion Exchange Membrane

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

Properties of dislocation networks formed by Si wafer direct bonding

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Si Wafer Direct Bonding

Direct Observation of Contact Potential Distributions of Wafer-Bonded P-Gaas/n-gan and P-Gaas/n-si by Scanning Kelvin Probe Force Microscopy

Capacitance Transient and Current-/Capacitance-voltage Study of Direct Silicon Bonded (110)∕(100) Interface

Electrical Properties Measurement for Interface Research in Silicon Bonding

Surface Potential Modeling and Reconstruction in Kelvin Probe Force Microscopy

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/Sige/Si Heterostructures

Nanoscale Electric Phenomena at Oxide Surfaces and Interfaces by Scanning Probe Microscopy

Modulation of 1.5 Μm Dislocation-Related Luminescence Emitted from a Direct Silicon Bonded Interface by External Bias

Quantification of Interfacial Voids Using Positron Annihilation Spectroscopy for Mechanism Study on SiCN Bonding and SiN Bonding

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Electron work function – a probe for interfacial diagnosis

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Space- and time-resolved mapping of ionic dynamic and electroresistive phenomena in lateral devices.

Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology

Self-organized Pattern Formation of Biomolecules at Silicon Surfaces: Intended Application of a Dislocation Network

Electrochemical Impedance Spectroscopy for Quantitative Interface State Characterization of Planar and Nanostructured Semiconductor-Dielectric Interfaces

Electric scanning probe imaging and modification of ferroelectric surfaces