Effect of Ga2O3 seed layer on microstructure and properties of Ga2O3:Ta nanocrystalline film
Haofei Huang,Lei Zhang,Keyun Gu,Zhichao Qian,Yi Shang,Zilong Zhang,Jian Huang,Ke Tang,Linjun Wang
DOI: https://doi.org/10.1016/j.mssp.2023.107705
IF: 4.1
2023-10-01
Materials Science in Semiconductor Processing
Abstract:This study investigates the influence of a Ga2O3 seed layer on the deposition of Ta-doped Ga2O3 (Ga2O3: Ta) nanocrystalline films using RF sputter deposition. Various substrate temperatures were employed to grow seed layers and thin films. The results indicate that the growth process was primarily governed by thermodynamic products. The incorporation of a seed layer decreased the energy requirement for crystallization, thereby encouraging the growth of nanocrystals within the thin film. By choosing an appropriate seed layer and temperature, the nanocrystalline film can adopt a 2D growth mode and achieve a flat surface morphology. Furthermore, Ta5+ effectively replaced Ga3+ in the film. Raising the temperature resulted in an increase in Ta content and a reduction in resistivity.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied