Abstract:The copper crystal cone-shaped micro-nanostructure is used as the substrate, and the Ni-W alloy layer and Au nanolayer are plated sequentially. Instantaneous soldering with lead-free solder is realized under ultrasonic assistance at room temperature. This solves the residual stress and thermal damage caused by high melting point lead-free solder on thin chips and thermal components, and ensures the safety and reliability of electronic components. Copper-based microstructures are deposited by electrochemical methods. An amorphous Ni-W alloy layer with a thickness of 180 nm is deposited on the Cu-based microstructures by adjusting the atomic ratio of the plating solution. The Ni-W layer is further coated with a 50 nm Au layer to prevent oxidation. Solid-phase transient soldering is realized by combining the Au/Ni-W multilayer thin-film-modified Cu substructures with commercial solder (SAC305) for a holding time of 3 s at a soldering pressure of 10,000 gf (20 MPa) while ultrasonically assisted. The soldered samples are aged at 180 °C for 10 min, 30 min, and 60 min, respectively. Copper substructures with different surface modifications are subjected to destructive shear experiments with solder balls. Scanning electron microscope and X-ray fluorescence thickness gauge are used to study the microstructure, intermetallic compound (IMC) composition thickness and properties of the soldered interface and section. The cone height of the Cu-based structure is 2-4 μm, and the diameter of the bottom is 800 nm-1200 nm, which has a sharp tip and an excellent L/D ratio. The interface between the Au/Ni-W modified Cu substructure and the solder ball is almost free of holes. The average shear strength at the soldering interface is about 43.06 MPa. The fracture surface after the shear experiment basically occurs inside the solder ball matrix, which belongs to the pure toughness fracture. The interface between the Au/Ni-W-modified Cu-based structure and the solder ball is subjected to long aging treatment at 180 °C. The soldering interface showed a "bright layer". New phases are generated on the solder side above the "bright layer", while no new phases appear on the Cu substructure side below the "bright layer". The copper-based microstructure is inserted into the inside of the solder ball to form an inlay and produce mechanical interlocking. Au/Ni-W alloy modification layer can effectively improve the surface hardness of copper-based structures. This creates a large hardness difference with soft solder and enables the formation of fewer holes in the insertion solder. Amorphous Ni-W alloys are prone to form dense oxide films during ultrasonication. The Au film modification prevents oxide generation and increases the average shear strength of the soldering interface. The Ni-W alloy layer retards the interdiffusion between Cu-Sn, blocks the excessive growth of Cu-Sn IMCs, and reduces the reliability problems caused by interface failure.

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