Abstract:Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices.

Growth Mechanism of Twinned SiC Nanowires Synthesized by a Simple Thermal Evaporation Method

Ultrafast growth of single-crystalline Si nanowires

Synthesis, Structure and Photoluminescence of Twinned SiC Nanowires

Large-scale synthesis and characterization of hexagonal prism-shaped SiC nanowires.

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Twinned Silicon and Germanium Nanocrystals: Formation, Stability and Quantum Confinement

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Synthesis and Microstructure of Epitaxial SiC Nanowires

Growth and Morphology of One-Dimensional SiC Nanostructures Without Catalyst Assistant

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Unusual Catalyst-Free Epitaxial Growth Of Silicon Nanowires By Thermal Evaporation

The TEM investigation on the twin mechanism of SiC nanowire

Tiny silicon nano-wires synthesis on silicon wafers

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Twinning Ge0.54Si0.46 Nanocrystal Growth Mechanism in Amorphous SiO2 Films

Growth of SiC Nanowires from NiSi Solution

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst