Abstract:Recently, a monolithic integration of optics and electronics in a single Si chip has attracted a great deal of attention due to its attractive application prospects: the potential for forming high speeded information processing and transmission, and inexpensive and low power silicon chip. Developing high-efficiency silicon-based light sources is the main task in silicon photonics. In the present paper the authors explore a potential way for silicon-based light-emitting application. A Mn(2+)-activated silicon-rich silicon oxide (SiO2 : Si : Mn2+) film was prepared on the n(+)-type silicon substrate using co-sputtering technique followed by doping and activation of Mn with a thermal diffusion method. High-resolution transmission electronic microscope study shows that the film is embedded with 3-5 nm silicon nanocrystals. Bright green photoluminescence (PL) from the film was observed under ultraviolet radiation and peaked at 524 nm (2.36 eV), the decay time of which is 0.8 ms. It is generally believed that the green radiation originates from 4T1 --> 6A1 transition in Mn2+. The PL excitation spectrum of the film, monitored at 524 nm, has a peak of 254 nm, similar to that of the Zn2 SiO4 : Mn film. It is believed that the strong 254 nm absorption is attributed to Mn2+ --> Mn3+ ionization or ds --> d4s transition. A very broad electroluminescence spectrum ranging from 400 to 800 nm, covering almost the whole visible band, was observed from the device made of the SiO2 : Si : Mn2+ film at low reverse biases. The threshold voltage of the device is as low as 5 V. Spectra of the device demonstrate that the electroluminescence is attributed to Mn2+ and luminescence centers in the Si-rich SiO2 film. The authors interpret that Mn2+ excitation is mainly due to direct impact excitation of hot electrons, silicon nanocrystals in the SiO2 film help electrons tunnel from a silicon nanocrystal to an adjacent one, and are advantageous for generating hot electrons to excite Mn2+.

Mixed Excitation Mechanism in Solid-State Cathodoluminescence Structure

Mixed Excitation in Electroluminesence

Organic Excitonic State Management by Surface Metallic Coupling of Inorganic Lanthanide Nanocrystals.

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Electroluminescence of SnO2∕p-Si heterojunction

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Luminescence Studies of a Si/SiO2 Superlattice

Luminescence Properties And Energy Transfer Of Ce3+,Tb3+-Coactivated-Sialon Phosphors

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell

Electroluminescence from a Mn2+ Activated SiO2:Si Film on N+-Si Substrate

Dual-Color Electroluminescence (<formula formulatype="inline"><tex>$\lambda \approx \hbox{450}\ \hbox{nm}$</tex></formula> and 650–700 nm) From a Silicon-Based Light Source

Electroplex emission from a layer of a mixture of a europium complex and tris(8-quinolinolato) aluminum

Luminescence from metal-oxide-semiconductor devices with Eu 3+ -doped CeO 2 films on silicon: From broadband to monochromatic emission

Design and Modulation on the Excited State Properties in Organic Electrofluorescence Materials

Photoluminescence and solid-state LED application based on pH-sensitive carbon quantum dots

Light-emitting Mechanism Conversion in C60-coupled Porous Si Systems

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Excitation-Selective and Double-Emissive Lead-Free Binary Hybrid Metal Halides for White Light-Emitting Diode and X-Ray Scintillation.

Cathodoluminescence of Silicon in the Visible–ultraviolet Region