Luminescence from metal-oxide-semiconductor devices with Eu 3+ -doped CeO 2 films on silicon: From broadband to monochromatic emission

Chunyan Lv,Qing Zhang,Yujian Zhang,Tao Pang,Weidong Xiang
DOI: https://doi.org/10.1016/j.jlumin.2023.119976
IF: 3.6
2023-06-09
Journal of Luminescence
Abstract:We report on the transformation from broadband to monochromatic orange-red emission for the electroluminescence (EL) from the metal-oxide-semiconductor (MOS) devices with europium (Eu 3+ )-doped CeO 2 films annealed at various temperatures as the light-emitting layers. Under the bias voltages exceeding 8 V, the 800 °C-annealed MOS device exhibits dominant Eu 3+ -related emission at 590 nm with a full width at half maximum of only ∼2 nm. In contrast, the 400 °C-annealed MOS device is activated into broadband emissions associated with the defects in the CeO 2 host. Also, the two distinct EL behaviors can co-exist by annealing the CeO 2 :Eu 3+ film at 600 °C. It has been demonstrated that the defect- and Eu 3+ -dependent EL are related to the Poole-Frenkel (P–F) and trap-assisted tunneling (TAT) electrical conduction mechanisms, respectively. The MOS device with a tunable EL is significant due to its potential applications, e.g., optoelectronic integration.
optics
What problem does this paper attempt to address?