Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Hot-Electron Energy Relaxation Time in Alinn/Aln/Gan 2deg Channels

Hot‐electron Drift Velocity and Hot‐phonon Decay in AlInN/AlN/GaN

Energy Relaxation by Warm Two-Dimensional Electrons in A Gan/Algan Heterostructure

Electron Transport and Microwave Noise in Mbe- and Mocvd-Grown Algan/Aln/Gan

Effect of Hot Phonon Lifetime on Electron Velocity in Inaln/Aln/Gan Heterostructure Field Effect Transistors on Bulk Gan Substrates

Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors

Electron Drift Velocity in Lattice-Matched Alinn/Aln/Gan Channel at High Electric Fields

Energy Relaxation Probed by Weak Antilocalization Measurements in Gan Heterostructures

Degradation in InAlN/GaN-based Heterostructure Field Effect Transistors: Role of Hot Phonons

InAlN‐barrier HFETs with GaN and InGaN Channels

Hot-electron Transient Transport in GaAs-AlGaAs Heterosystems with Finite Proton Relaxation Times

Effect of Nonequilibrium Phonons on Hot-Electron Spin Relaxation in N-Type Gaas Quantum Wells

Hot Electron Dynamics in Zincblende and Wurtzite GaN

Thermal-noise Temperature of GaAs Heterosystems for Steady-State Hot-Electron Transport with Nonequilibrium Phonons

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

Magneto-hot-electron Transport for GaAs-Ga1−xAl

Quasiadiabatic Electron Transport in Room Temperature Nanoelectronic Devices Induced by Hot-Phonon Bottleneck

Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in Gan

Energy Relaxation of Hot Electrons Driven by Intense Terahertz Fields in Two-Dimensional Semiconductor Systems

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach