Abstract:The metal Al is commonly attached to external circuits as the source and drain in GaN-based field effect transistors, so profound comprehension of the energy transfer between electrons and phonons in Al/GaN is crucial for nanofabrication and thermal management of electronic devices. Time-domain thermoreflectance (TDTR) is an effective technique for measuring the strength of non-equilibrium electron-phonon (e-ph) coupling. The two-temperature model (TTM) is widely employed in conjunction with TDTR methods to determine electron-phonon coupling factors. However, TTM is a gray method and cannot take into account interactions between electrons and different phonon modes. Therefore, in this work, we use the TDTR technique to analyze the non-equilibrium transport properties of pure Al, the thickness dependence of the e-ph coupling with Al nanofilms, and the coupling strengths of high-energy electrons excited by femtosecond lasers with different modes of phonons are obtained in conjunction with MTM. The results show that the e-ph coupling coefficients of Al nanofilms on GaN substrates are larger than those of pure Al. In conjunction with the TTM, we determined the coupling strength between high-energy electrons excited by femtosecond laser pulses and various phonon modes. Compared to the transverse acoustic branch-1 (TA1) and transverse acoustic branch-2 (TA2) modes, the longitudinal acoustic (LA) phonon mode of Al exhibits a higher e-ph coupling factor. This suggests that the LA mode predominates in the electron relaxation process after ultrafast femtosecond laser excitation. This study provides experimental and theoretical guidance for laser processing and electronic device design.

Electron Transport and Microwave Noise in Mbe- and Mocvd-Grown Algan/Aln/Gan

Hot-Electron Energy Relaxation Time in Alinn/Aln/Gan 2deg Channels

Hot‐electron Drift Velocity and Hot‐phonon Decay in AlInN/AlN/GaN

1/F Noise in GaN/AlGaN HEMTs

Degradation in InAlN/GaN-based Heterostructure Field Effect Transistors: Role of Hot Phonons

1/F Noise in As-Processed and Proton-Irradiated Algan/Gan Hemts Due to Carrier Number Fluctuations

Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs

Magneto-hot-electron Transport for GaAs-Ga1−xAl

Effect of Hot Phonon Lifetime on Electron Velocity in Inaln/Aln/Gan Heterostructure Field Effect Transistors on Bulk Gan Substrates

Nonequilibrium electron-phonon coupling across the interfaces between Al nanofilm and GaN

Electron Drift Velocity in Lattice-Matched Alinn/Aln/Gan Channel at High Electric Fields

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

An Electron–phonon Monte Carlo Study on Thermal Transport in GaN

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Low-Frequency Noise Characterization of Hot-Electron Degradation in Gan-Based Hemts

Low-Frequency Noise In Gan Thin Films Deposited By Rf-Plasma Assisted Molecular-Beam Epitaxy

Room Temperature Mobility above 2100 Cm2/Vs in Al0.3ga0.7n/Ain/Gan Heterostructures Grown on Sapphire Substrates by Mocvd

Matryoshka Phonon Twinning in alpha-GaN

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

Study of Low-Frequency Excess Noise in Gan Thin Films Deposited by Rf-Mbe on Intermediate-Temperature Buffer Layers

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN