Low Temperature Preparation of Baxsr1-Xtio3 Thin Films Prepared by Sol-Gel-Hydrothermal Method

ZQ Wei,HP Xu,M Noda,M Okuyama
DOI: https://doi.org/10.1080/10584580108015543
2001-01-01
Integrated Ferroelectrics
Abstract:BaxSr1-xTiO3 (BST) thin films with perovskite structure have been prepared on /Pt/Ti/SiO2/Si substrate using a combined process of conventional sol-gel process and a hydrothermal treatment. Atomic ratio in the film, Ba/Sr, was controlled by changing the concentration ratio of Ba(OH)(2) and Sr(OH)(2) of work solution. The BST thin films with polycrystalline structure are obtained on silicon at processing temperature of 140degreesC. The structure development, stoichiometry spectroscopic, and dielectric properties of BST thin films have been systematically investigated. X-ray diffraction patterns show that well-developed crystallites with a pure perovskite phase have been formed. The composition of BST thin film derived by sol-gel-hydrothermal treatment depends on the concentration ratio of Ba(OH)(2) and Sr(OH)(2) of work solution intensively. SEM and AFM results show that the structure of as-treated BST thin film strongly depends on the film thickness.
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