Abstract:Modern industry routinely uses sophisticated microscopic methods for quality control and for predicting the performance of manufactured products. These processes typically exploit optical emission and scattering phenomena—such as electron backscattered diffraction and energy-dispersive x-ray spectroscopy—using equipment attached to conventional scanning electron microscopy (SEM). In silicon-based metal oxide semiconductor (MOS) devices, residual stresses may remain from the manufacturing process owing to a mismatch in thermal expansion coefficients between constituent materials. Thermal fatigue and electromigration (displacement of atoms induced by electric current) phenomena can also affect the devices’ micromechanical state. Up to now, SEM has not been applied to these problems for two reasons. First, the effects of strain on electronic transitions arising from band-gap or optically active point defects, as well as their interaction with the electron probe, were not fully understood. Second, no comprehensive algorithm could be found that took into account the superposition of several chemical, physical, and mechanical effects (i.e., temperature gradients, self-absorption, chemical gradients) to extract the stress information from the luminescence spectrum. Yet, the spatial resolution of the SEM would be highly advantageous in residual stress assessment. We recently developed a spectroscopic method for analyzing materials and devices in the SEM that works by visualizing surface and subsurface stress fields. Further, we have used the technique to solve a number of important industrial problems, for example, the stress stored in interconnect structures (like inFigure 1. An SEM image (a) and a CL/PS stress image (b) of the immediate neighborhood of the crack tip in a gallium nitride crystal. The stress map represents the spatial variation of the trace of the stress tensor acquired with a spatial resolution of 30nm.

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Electro-Stimulated Piezo-Spectroscopy for Measuring Nano-Scale Residual Stress Fields in Ceramics

Looking at the Nanomechanics of Electronic Devices under the Scanning Electronic Microscope

Measurements of Microscopic Stresses in Si-Based Polycrystalline Ceramics

Quantitative Assessment of Crack-Tip Stress Field in Semiconductor GaN Using Electrostimulated Piezo-Spectroscopy

Spatially Resolved Crack-Tip Stress Analysis in Semiconductor by Cathodoluminescence Piezospectroscopy

Challenging Nano-Scale Stress Evaluation in Glassy and Crystalline Semiconductor Heterostructures

Visualization of Microscopic Stress Fields in Silica Glass in the Scanning Electron Microscope

High-resolution Stress Assessments of Interconnect/dielectric Electronic Patterns Using Optically Active Point Defects of Silica Glass As a Stress Sensor

Residual Stress Inspection by Eu3+ Photoluminescence Piezo-Spectroscopy: an Application in Thermal Barrier Coatings

Spatially Resolved Residual Stress Assessments of Gan Film on Sapphire Substrate by Cathodoluminescence Piezospectroscopy

Advanced Nano-Scale Metrology for the Characterization of Ceramic Materials in the Scanning Electron Microscope

A Photo-Stimulated Spectroscopic Method for Spatially Resolved Stress Analysis in Hetero-Epitaxial Films

Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution

Stress Dependence of the Near-Band-Gap Cathodoluminescence Spectrum of Gan Determined by Spatially Resolved Indentation Method

Stress Dependence of F+-center Cathodoluminescence of Sapphire

Measurement of Residual Stress in a Multi-Layer Semiconductor Heterostructure by Micro-Raman Spectroscopy

Stress Dependence of Optically Active Diamagnetic Point Defects in Silicon Oxynitride

Cathodoluminescence Study of Off‐stoichiometry and Residual Stresses in Advanced Dielectrics and Related Devices

Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy

Microscopic Stress Analysis In A Luminescent Glass