Influence of annealing on the properties of the transparent zinc oxide thin film prepared by radio frequency(RF) magnetron sputtering

WANG Dong-mei,XU Guang-qing,WU Yu-cheng,ZHENG Zhi-xiang

DOI: https://doi.org/10.3969/j.issn.1003-5060.2006.10.001

2006-01-01

Abstract:The c axis orientation ZnO film was successfully deposited on the glass substrate by the radio frequency(RF) magnetron sputtering technique and annealed at various temperatures ranging from(350 ℃ to) 600 ℃ in the air.The effect of annealing on the crystallization,surface morphology and transmittance of the ZnO film was investigated by means of X-ray diffraction(XRD),the scanning electron microscope(SEM) and the UV-Vis spectrum.The results show that,with the increasing of the annealing temperature,the intensity of(002) diffraction peak becomes stronger and the full width at half the maximum(FWHM) of the(002) diffraction peak decreases gradually,and that the stress along the c axis in the film relaxes when the film is annealed at 500 ℃.After annealing,the transmittance of the film changes little but the "red shift" phenomenon is observed.