Low-temperature sintering PZT-based ceramics for extreme condition application
Haiying Li,Bijun Fang,Shuai Zhang,Xiaolong Lu,Jianning Ding
DOI: https://doi.org/10.1007/s10854-023-11409-3
2023-10-09
Journal of Materials Science Materials in Electronics
Abstract:Ba(Cu 0.5 W 0.5 )O 3 (BaCW)-doped (1− x )Pb(Zr 0.5 Ti 0.5 )O 3 – x (Bi 0.5 Na 0.5 )ZrO 3 [(1− x )PZT– x BNZ, x = 0.025–0.1] ceramics were prepared by solid-state reaction method. Low-temperature sintering is realized at around 1000 °C sintering temperature due to adding BaCW sintering aid and (Bi 0.5 Na 0.5 )ZrO 3 (BNZ) second component. All low-temperature sintered BaCW-doped (1− x )PZT– x BNZ ceramics exhibit pure perovskite structure, in which the structure changes successively from tetragonal, across morphotropic phase boundary (MPB) and to rhombohedral with increasing the BNZ content. All samples have large density, high resistivity, and rather uniform morphology with decreased grain size. All ceramics present apparent relaxation characteristic, and the MPB effect is confirmed by dielectric, ferroelectric, and piezoelectric performance characterization, whereas extremum performance appears at different compositions. High Curie temperature ( T C ) with acceptable piezoelectricity ( d 33 ) is obtained in the BaCW-doped (1− x )PZT– x BNZ system prepared by low-temperature sintering technique, i.e., the 1000 °C sintered 2 wt% BaCW-doped 0.9PZT–0.1BNZ having d 33 = 209 pC/N with T C = 281 °C, and 0.95PZT-0.05BNZ having d 33 = 151 pC/N with T C = 345 °C, which present broad application possibility in piezoelectric-related fields under extreme condition.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied