Dielectric-Relaxation Behavior of Bismuth Layer Structure Ceramics

XL WANG,X YAO
DOI: https://doi.org/10.1080/07315179108203320
1991-01-01
Ferroelectrics Letters Section
Abstract:Strong dielectric relaxation behavior in bismuth layer structure ceramics having compositions Bi2 (La½K½)Nb2O9, Bi2La(TiNb)O9 and Bi2La(TiTa)O9 has been observed. Temperature differences of dielectric constant maximum at various frequencies of bismuth layer structure ceramics are much larger than those of perovskite ceramics. A new dielectric anomaly has been observed at about −40°C in the temperature dependence of dielectric constant of Bi4Ti3O12 which is a well known ferroelectric compond with high Curie temperature of 675°C.
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