Synthesis and Dielectric Properties of Layer-structured Compounds A N −3 Bi 4 Ti N O 3 N +3 (A = Ba, Sr, Ca) with N > 4

Hou R. Z.,Chen X. M.

DOI: https://doi.org/10.1557/jmr.2005.0287

2005-01-01

Abstract:Several bismuth layer-structured compounds A n −3 Bi 4 Ti n O 3 n +3 (A = Ba, Sr, Ca) with n > 4 were synthesized and investigated. The average radius of A-site cations was found to be closely related to the lattice parameters in the a-b plane and, therefore, closely related to the stability of the layer structure. For Ba 2 Bi 4 Ti 5 O 18 ceramics, there was a diffused phase transition centered at approximately 330 °C, which should be due to the cation redistribution of A-site Ba 2+ and Bi 3+ in the (Bi 2 O 2 ) 2+ layer. For Sr 2 Bi 4 Ti 5 O 18 ceramics, a sharp dielectric constant peak was found at 325 °C. Ceramics of five-layered Ca 2 Bi 4 Ti 5 O 18 and six-layered Ca 3 Bi 4 Ti 6 O 21 showed temperature-stable dielectric constants up to 800 °C, and ferroelectricity was observed. In addition, as ferroelectrics, these Ca-containing bismuth layer-structured compounds showed frequency-independent dielectric constants >150 and small tan δ on the order of 10 −3 -10 −4 in the frequency range of 1 kHz to 1 MHz.