Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Scattering Potentials at Si-Ge and Sn-Ge Impurity Dimers on Ge(001) Studied by Scanning Tunneling Microscopy Andab Initiocalculations

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Flip Motion of Heterogeneous Buckled Dimers on Ge(001) by Electron Injection from Stm Tip

Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)

Triangular Mott-Hubbard Insulator Phases of Sn/Si(111) and Sn/Ge(111) Surfaces

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Sign-reversal Superconducting Gaps Revealed by Phase-Referenced Quasiparticle Interference of Impurity-Induced Bound States in (Li1-Xfex)ohfe1-yznyse

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Local Lattice Distortion of Ge Impurity in Si (001): Multiple-Scattering Exafs Study

Ab Initio Calculation of Co2mnsi/Semiconductor (sc, = Gaas, Ge) Heterostructures

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Adsorption and Tunneling of Atomic Scale Lines of Indium and Lead on Si(100)

Ab Initio Interatomic Potentials and Lattice Dynamics of C,Si and Ge

Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3.

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator

Elastic scattering of surface states on three-dimensional topological insulators

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Chemisorption of Group-Iii Metals on the (111) Surface of Group-Iv Semiconductors: In/Ge(111)

Multiple Scattering Theory for Massive Dirac Fermions on the Topological Insulator Surface with a Strong Warping Effect

Valence Energy Level Structure Of Si1-Xgex/Si Quantum Disk