Abstract:Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier‐lifetime measurements and carrier‐lifetime imaging, to resolve several fundamental and technology‐related questions related to the a‐Si:H/c‐Si interface. To gain insight, the a‐Si:H/c‐Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed of hydrogen mono‐layer passivation of the c‐Si surface and from the perspectives of a‐Si:H bulk properties. It is found that both models have severe limitations and suggest that a new physical model of the interface, considering both is required.

Photoemission study of a-Si:H/a-SiNx:H interface formation

Photoemission Study of the a-Si-H/a-SiOx:H and a-Si:H/a-SiN:H Interface Formation

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Study of Photoacoustic Spectra of Amorphous Semiconductor Superlattice Films

Interface Properties Of A-Si-H/A-Sicx-H Superlattice

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Optical Properties and Interface Study of A-Si:H/a-c:h Superlattices

Structure of Amorphous Semiconductor Interfaces Determined from in Situ Optical Reflectivity Measurements

Interface structure and photoelectric properties of heterojunction thin films materials

Carrier Transport Mechanism and Band Offsets at the Interface of ZnS/n-Si (111) Heterojunctions Fabricated by Vacuum Thermal Evaporation

X-ray and Ultraviolet Photoemission Study of the Formation and Band Lineup of C60/Si(111) Interface

Microstructure evolution and energy band alignment at the interface of a Si-rich amorphous silicon carbide/c-Si heterostructure

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

A Study on Strong Room Temperature Photoluminescence of A-Sinx : H Films

Photoemission Study of the Sm/Si(100)2×1 Interface

Property Investigation of A-Si/c-si Hetero-Junction Structure

Photoemission study of HfO 2 films deposited on GaN/Al 2 O 3

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

The formation of the positive, fixed charge at c-Si(111)/a-Si$_3$N$_{3.5}$:H interfaces