Novel Pre-Charge Strategy for Power Efficient SRAM

CHEN Shu-yu,YAN Wei-wei,ZENG Xiao-yang

2009-01-01

Abstract:posed scheme reads data correctly and save read power by approximately 24.4% during continuous read operations.

What problem does this paper attempt to address?

A low-Power SRAM with charge cycling based read and write assist scheme

Hanzun Zhang,Song Jia,Jiancheng Yang,Yuan Wang

DOI: https://doi.org/10.1109/ICSICT49897.2020.9278282

2020-01-01

Abstract:In a SRAM array, the largest power consumer is pre-charging or voltage switching on bit-lines in read or write operations. The paper presents a bit-line charge cycling based read and write assist circuit for static random-access memory. With help of the assist circuit, the BLs charges wasted in conventional design is reused for BLs pre-charging in next period. The proposed array is simulated in SMIC 14nm FinFET process with a supply voltage of 0.8V. Simulation results show that a 23%-43% power reduction is achieved compared with conventional designs.
CDS-RSRAM: a Reconfigurable SRAM Architecture to Reduce Read Power with Column Data Segmentation

Han Xu,Ziru Li,Fei Qiao,Qi Wei,Xinjun Liu,Huazhong Yang

DOI: https://doi.org/10.1109/isqed48828.2020.9136993

2020-01-01

Abstract:SRAM access takes a significant part of on-chip power consumption in many signal processing systems. Reconfigurable data-adaptive SRAMs (RSRAM) can save considerable read power by utilizing data patterns. In these RSRAM designs, the column size (i.e., the number of cells in one column) of the cell array defines the granularity of data pattern exploitation. However, the column size cannot be too small due to circuit constraints, which makes finer-grained data features hidden and suppresses RSRAM's advantage of low-power read. In this paper, we propose a reconfigurable SRAM architecture with column data segmentation (CDS-RSRAM) to break this limitation to exploit better data patterns without decreasing the column size. We partition data in one column into several segments and perform statistical analysis on every segment respectively. Each data segment has one exclusive flag bit to control its working mode while reading. This architecture can leverage data patterns at finer granularity and magnify RSRAM's advantage of low-power read. We also make a thorough overhead analysis and improve the mode decision strategy to minimize the power overheads. The simulation results show that compared with the original RSRAM, the proposed architecture saves up to 36.8% read power with 8.8% area overhead. Compared with 8T SRAM, the total power saving can be up to 77.1%.
Lazy Precharge: An overhead-free method to reduce precharge overhead for memory parallelism improvement of DRAM system

Tao Zhang,Cong Xu,Yuan Xie,Guangyu Sun

DOI: https://doi.org/10.1109/ICCD.2013.6657036

2013-01-01

ICCD

Abstract:As we enter the multi-core era, the main memory becomes the bottleneck due to the exploded memory requests. In this work, we propose a novel memory architecture-Lazy Precharge (LaPRE) that enables aggressive activation schemes so that multiple rows in a bank can be activated successively without the interrupt from precharges. Therefore, LaPRE effectively reduces the precharge overhead and thus improves memory parallelism. In addition, three memory scheduling schemes are proposed correspondingly to fully make use of the improved memory parallelism. The experimental results show that LaPRE can achieve 14% performance improvement on average without hardware overhead.
A SELECTIVE READ-BEFORE-WRITE SCHEME FOR ENERGY-AWARE SPIN TORQUE TRANSFER RAM (STT-RAM) CACHE DESIGN

Tiefei Zhang,Tianzhou Chen,Jianzhong Wu,Youtian Qu

DOI: https://doi.org/10.1142/s0218126613500382

2013-01-01

Abstract:Due to its low leakage power and high density, spin torque transfer RAM (STT-RAM) has become a good candidate for future on-chip cache. However, STT-RAM suffers from higher write energy compared to the SRAM. One state-of-the-art technique to alleviate this problem is read-before-write (RBW). In this paper, we study the pattern of the write accesses to the L2 cache and show that directly applying the RBW to a STT-RAM L2 cache can be problematic from energy perspective. We then propose a selective read-before-write (SRW) scheme to further reduce the dynamic write energy of the STT-RAM cache. Additional optimizations are included in the design of SRW so that it can save a considerable amount of energy at negligible overheads. The experimental results show that SRW achieves a 86.0% reduction in write energy consumption vs. a baseline without any write optimization techniques, and a 6.55% more reduction compared to the RBW scheme.
An eDRAM with Logic Technology Using High-Speed R/W and Compact Charge Transfer Refresh Scheme

CHENG Kuan,MA Ya-nan,MENG Chao,DONG Cun-lin,LIN Yin-yin

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2012.01.006

2012-01-01

Abstract:An embedded DRAM with logic technology using high-speed read/write and low power refresh scheme is proposed.The logic technology enables DRAM easier to merge with high performance logic circuits in design and fabrication of embedded systems.Adopting read/write pre-amplifier scheme optimizes the operation speed of the memory.Compact charge transfer refresh is used to replace conventional scheme so as to reduce the refreshing power and time of the memory,thus the data availability of DRAM is improved.With 3ns clock cycle,the simulation results illustrate that the write cycle of memory is 3 ns and is 23% reduced,meanwhile the access time is 1.8 ns and is 15% reduced,compared with the conventional scheme.The refreshing power and time are 58% and 43% reduced respectively,compared with the conventional scheme.
Novel dual power hybrid write operation structure for STT-MRAM

Xiangjian Jia,Guanxi Cheng,Guangjun Zhang,Yanfeng Jiang

DOI: https://doi.org/10.1080/00207217.2024.2312562

2024-02-07

International Journal of Electronics

Abstract:Due to the inherent physical characteristics and the influence of process variation, the write operation in the 1T–1 R STT-MRAM bit-cell shows critical issues of asymmetric and stochastic. In the paper, a low power write circuit with a novel dual power hybrid (NDPH) structure is presented to address the issues. The designed write circuit includes the NDPH structure, write verification circuit and write self-termination circuit, etc. It can be used to detect the write operation status in real-time. Based on the detection, the status of the write driver can be adjusted on time. The proposed write circuit in the paper can save about 50% of the power consumption. The write voltage can be reduced to 0.68 V. The proposed circuit shows a potential application for low-power writing operation in STT-MRAM.

engineering, electrical & electronic
Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Zixuan Chen,Huaqiang Wu,Bin Gao,Dong Wu,Ning Deng,He Qian,Zhichao Lu,Brent Haukness,M. Kellam,Gary Bronner

DOI: https://doi.org/10.1109/imw.2017.7939097

2017-01-01

Abstract:A 16Mb RRAM Chip with source line (SL) current limitation and a novel programming strategy is developed. Comparing with traditional gate control current method, SET operation with source current control can significantly narrow the read current distribution. The programming strategy is optimized simultaneously using a low current multi-step forming and single pulse program operation. With these optimizations, the raw bit yield is improved to 99.99%. Meanwhile the devices on the chip showed good endurance up to 106 cycles without degradation. After 106 cycles the bit error rate of the array is still less than 0.2%. The chip also showed 10 years' retention at 85°C.
Operation-oriented solution to boost key performance of RRAM

Bing Chen,Bin Gao,S. W. Sheng,Lifeng Liu,Xunyan Liu,Yong Chen,Yanqun Wang,Jinfeng Kang,Bin Yu

DOI: https://doi.org/10.1109/SNW.2010.5562578

2010-01-01

Abstract:Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.
Resonant Energy Recycling SRAM Architecture

Riadul Islam,Biprangshu Saha,Ignatius Bezzam

DOI: https://doi.org/10.1109/tcsii.2020.3029203

2021-04-01

Abstract:Although we may be at the end of Moore's law, lowering chip power consumption is still the primary driving force for the designers. To enable low-power operation, we propose a resonant energy recovery static random access memory (SRAM). We propose the first series resonance scheme to reduce the dynamic power consumption of the SRAM operation. Besides, we identified the requirement of supply boosting of the write buffers for proper resonant operation. We evaluated the resonant 144KB SRAM cache through SPICE and test chip using a commercial 28nm CMOS technology. The experimental results show that the resonant SRAM can save up to 30% dynamic power at 1GHz operating frequency compared to the state-of-the-art design.
A Novel Read Circuit for RRAM Based on RC Delay Effect

Jiabao Ye,Xuecheng Cui,Haoxiong Bi,Jifang Cao,Wannian Wang,Xiaoxin Xu,Dong Liu,Bing Chen

DOI: https://doi.org/10.1049/ell2.12964

2023-01-01

Electronics Letters

Abstract:In this paper, a novel Resistive Random-Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit. Simulation results demonstrate the feasibility and effectiveness of the proposed circuit, with accurate reading of RRAM states and fast reading speed in the nanosecond range. The sense margin of the proposed circuit has improved as the array size increases, enhancing its application for advanced node RRAM array manufacture. Compared with conventional circuits, the proposed circuit achieved power consumption reduction of 6% and area reduction of 46.9 um2, resulting in a 97.5% reduction in area, providing an effective solution to address the cost and chip size challenges associated with RRAM industrialization. The authors proposed a novel read circuit for Resistive Random-Access Memory (RRAM) based on the RC delay effect. Compared with conventional circuits, the proposed circuit achieved power consumption reduction of 6% and area reduction of 46.9 um2, providing an effective solution to address the cost and chip size challenges associated with RRAM industrialization.image
Low-Power High-Yield Sram Design With Vss Adaptive Boosting And Bl Capacitance Variation Sensing

Ningxi Liu,Yu Jiang,Qing Dong,Hui Li,Xinyi Hu,Yinyin Lin

DOI: https://doi.org/10.1109/ASICON.2013.6811968

2013-01-01

Abstract:Adaptive VSS boosting with process variation compensation is proposed to reduce the standby leakage by 6X at room temperature and improves the write static noise margin. The N- pulse read assist circuit enables higher read stability and faster read speed. The systematic BL capacitance variation is detected, and a proper WL voltage is generated to mitigate the BL discharging speed variation by 20%.
Column-Selection-Enabled 10T SRAM Utilizing Shared Diff-VDD Write and Dropped-VDD Read for Power Reduction

Liang Wen,Yuejun Zhang,Xiaoyang Zeng

DOI: https://doi.org/10.1109/tvlsi.2019.2898346

2019-01-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:A nondestructive column-selection-enabled 10T SRAM for aggressive power reduction is presented in this brief. It frees a half-selected behavior by exploiting the bitline-shared data-aware write scheme. The differential-VDD (Diff-VDD) technique is adopted to improve the write ability of the design. In addition, its decoupled read bitlines are given permission to be charged and discharged depending on the stored data bits. In combination with the proposed dropped-VDD biasing, it achieves the significant power reduction. The experimental results show that the proposed design provides the 3.3x improvement in the write margin compared with the standard Diff-10T SRAM. A 5.5-kb 10T SRAM in a 65-nm CMOS process has a total power of 51.25 mu W and a leakage power of 41.8 mu W when operating at 6.25 MHz at 0.5 V, achieving 56.3% reduction in dynamic power and 32.1% reduction in leakage power compared with the previous single-ended 10T SRAM.
Improving energy efficiency of write-asymmetric memories by log style write.

Guangyu Sun,Yaojun Zhang,Yu Wang,Yiran Chen

DOI: https://doi.org/10.1145/2333660.2333705

2012-01-01

Abstract:ABSTRACTThe significant scaling challenges of conventional memories, i.e., SRAM and DRAM, motivated the research on emerging memory technologies. Many promising memory technology candidates, however, suffer from a common issue in their write operations: the switching processes at different write operations (i.e., 0 → 1 and 1 → 0) are asymmetric. Using a pessimistic design corner to cover the worst case of a write operation incurs large power and performance cost in the existing emerging memory technology designs. In this work, we propose a universal log style write methodology to mitigate this asymmetry issue by operating two switching processes in separate stages. The dedicated design optimizations are allowed on either switching process. The simulation results on the spin-transfer-torque random access memory based last-level cache show that our technique can improve the system performance by 4% while receiving 35% power reduction on average1.
A near-threshold SRAM design with transient negative bit-line voltage scheme

chengzhi jiang,z ye,yan wang

DOI: https://doi.org/10.1109/EDSSC.2015.7285052

2015-01-01

Abstract:With the percentage of embedded SRAM increasing in SoC chip, low-power design such as near-threshold SRAM technique is getting more and more attention to reduce entire chip energy consumption. However, the descending operating voltage will lead to longer write latency and higher failure rate. In this work, we present near-threshold SRAM design in which transient negative bit-line is employed as periphery assisting techniques for the first time. Simulations show in 40nm technology the write ability manifest 15× speedup over the conventional case at 0.6V supply voltage and 1M-cell SRAM array design can work under near-threshold supply voltage with 90% yield.
A Low Power Localized 2T1R STT-MRAM Array with Pipelined Quad-Phase Saving Scheme for Zero Sleep Power Systems.

Kejie Huang,Rong Zhao,Ning,Yong Lian

DOI: https://doi.org/10.1109/tcsi.2014.2333361

2014-01-01

Abstract:The high leakage power due to process nodes scaling down has been one of the critical issues in CMOS circuits, especially the sleep power critical systems. The conventional retention CMOS register based approaches cannot fully address the high standby energy issue in long time standby systems. The recent non-volatile Flip-Flop (nvFF) based approaches may achieve zero sleep power consumption, but still face the challenges of high saving power and area overhead, and low data reliability. This paper presents a new resistive Non-Volatile Memory (NVM) based circuit architecture with zero leakage power dissipation. It stores the states of the registers in the localized spin-torque-transfer magnetic random access memory (STT-MRAM) array through scan chains, which has reduced by more than 20% sleep energy than conventional nvFF schemes, and saved by more than 99.8% sleep energy compared to the retention CMOS register based approaches when the sleep time is longer than 1 s. Moreover, the proposed pipelined quad-phase saving scheme maximizes the saving speed, while reduces the peak saving current.
A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Xiang Zheng,Ming Liu,Hong Chen,Huamin Cao,Cong Wang,Zhiqiang Gao

DOI: https://doi.org/10.1109/ddecs.2012.6219052

2012-01-01

Abstract:This paper focuses on high speed embedded SRAM design, especially on novel circuit technique to improve SRAM access time. A new two-stage sensing scheme which is able to reduce long interconnection metal line delay by transferring differential signals with half swing amplitude has been proposed. Post-layout simulation results show that the long distance signal transmission time has been decreased by 45%. Chip measurement shows the access time has been decreased by 23% at the expense of little area penalty (1.3%) and some read power penalty (about 16%) mainly caused by 2nd-stage sense amplifiers.
An energy efficient backup scheme with low inrush current for nonvolatile SRAM in energy harvesting sensor nodes

Hehe Li,Yongpan Liu,Qinghang Zhao,Yizi Gu,Xiao Sheng,Guangyu Sun,Chao Zhang,Meng-Fan Chang,Rong Luo,Huazhong Yang

DOI: https://doi.org/10.7873/date.2015.0357

2015-01-01

Abstract:In modern energy harvesting sensor nodes, nonvolatile SRAM (nvSRAM) has been widely investigated as a promising on-chip memory architecture because of its zero standby power, resilience to power failures, and fast read/write operations. However, conventional approaches transfer all data from SRAM into NVM during the backup process. Thus, large on-chip energy storage capacitors are normally required. In addition, high peak inrush current is generated instantaneously, which has a negative impact on energy efficiency and circuit reliability. To mitigate these problems, we propose a novel holistic backup flow, which consists of a partial backup process and a run-time pre-writeback scheme for nvSRAM based caches. A statistics based dead-block predictor is employed to achieve a fast and low power partial backup process. We also present an adaptive pre-writeback point allocation strategy to further reduce the backup load. Simulation results show that, with our proposed backup scheme, energy storage capacitance is reduced by 34% and inrush current is reduced by 54% on average compared to the conventional full backup scheme.
Exploiting Page Write Pattern for Power Management of Hybrid Dram/Pram Memory System

Tiefei Zhang,Jianguo Xing,Jixiang Zhu,Tianzhou Chen

DOI: https://doi.org/10.6688/jise.2015.31.5.8

2015-01-01

Journal of information science and engineering

Abstract:The main memory has become a power bottleneck for computer systems. To reduce the energy dissipation of main memory, the non-volatile phase-change RAM (PRAM) has emerged as one of the promising memories due to its high density and low standby power. But PRAM has its intrinsic disadvantages of long write latency and high write energy. Hence, the hybrid DRAM/PRAM main memory is proposed to provide the advantage of low standby power of PRAM as well as high performance and low access power of DRAM. Data management, such as migrating frequently accessed data from PRAM to DRAM, is widely employed by past work to achieve the benefits of both DRAM and PRAM. But the past work is oblivious to the data migration energy overhead, which is considerable as confirmed by our study. In this work, we studied the page write access pattern of pages within and across applications and observed that two pattern widely exist, namely write-average and write-cluster. We then propose an adaptive page migration strategy (APMS) that migrates data of a page based on its write pattern to reduce the migration energy in DRAM/PRAM hybrid memory system. Our APMS exploits the write pattern of a page and determines the amount of data that should be migrated against the existing page-level data migration strategy. Experiments were conducted to verify the validity of the strategy. The results show that APMS can reduce the energy consumption of most applications with negligible performance impact and energy overhead.
A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

HongMing Chen,YuHua Cheng

DOI: https://doi.org/10.1007/s11432-014-5060-5

2014-01-01

Science China Information Sciences

Abstract:Sub-threshold leakage is a major issue for low power circuits design, especially for SRAM design in SoC. Sub-threshold leakage can be decreased by scaling down supply voltage. However, this may dramatically increase the circuit delay. In this paper, we propose a novel 6 T SRAM array structure with a switch module which operates in the near threshold region to reduce the leakage current. In order to verify our proposed leakage reduction scheme, we designed and simulated an 8192 kB SRAM array based on a 16 KB single port SRAM cell memory model in 55 nm process. Several 6 T SRAM Array instances are implemented in 55-nm 1P6M CMOS technology to measure the standby current of the proposed scheme as well. With the proposed technique, we achieved 28.3% reduction for leakage current compared to traditional 6 T SRAM array, in standby mode where gate leakage is dominant. The total penalty is 2% area increase and 1% speed reduction.
A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

Erfan Abbasian,Maryam Nayeri,Elangovan Mani

DOI: https://doi.org/10.1007/s00034-024-02718-x

IF: 2.311

2024-05-22

Circuits Systems and Signal Processing

Abstract:SRAMs, the go-to choice for system-on-chips nowadays, suffer from high power consumption and unstable behavior in nanoscale CMOS technology. Consequently, we observe the emergence of troublesome short-channel effects (SCEs), necessitating the utilization of innovative nano-devices. Combining its attractive features, including reduced SCEs and leakage, the fin-shaped field-effect transistor (FinFET) shines as a skillful replacement for CMOS, skillfully tackling those injurious problems. This paper presents a near-threshold single-bitline 9T (SB9T) SRAM cell, with a primary focus on enhancing stability and energy efficiency. The SB9T SRAM cell integrates a read-assist scheme and a feedback-cutting technique to enhance read stability and writability. By conducting simulations utilizing a 7-nm FinFET technology and operating at a voltage of 0.5 V, the SB9T SRAM cell demonstrates remarkable performance advantages when compared to existing designs. Specifically, in comparison to the conventional 6T cell, the SB9T SRAM cell achieves an improvement of 1.86 × in read stability and 2.41 × in writability. Additionally, the SB9T SRAM cell minimizes power dissipation from leakage by at least 8.73% and enhances write energy efficiency by a minimum of 4.84%. It should be noted that although the SB9T SRAM cell consumes 1.03 × more read energy than the conventional 8T cell, it still surpasses alternative designs by reducing read energy consumption by at least 4.86%.

engineering, electrical & electronic

Novel Pre-Charge Strategy for Power Efficient SRAM

A low-Power SRAM with charge cycling based read and write assist scheme

CDS-RSRAM: a Reconfigurable SRAM Architecture to Reduce Read Power with Column Data Segmentation

Lazy Precharge: An overhead-free method to reduce precharge overhead for memory parallelism improvement of DRAM system

A SELECTIVE READ-BEFORE-WRITE SCHEME FOR ENERGY-AWARE SPIN TORQUE TRANSFER RAM (STT-RAM) CACHE DESIGN

An eDRAM with Logic Technology Using High-Speed R/W and Compact Charge Transfer Refresh Scheme

Novel dual power hybrid write operation structure for STT-MRAM

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Operation-oriented solution to boost key performance of RRAM

Resonant Energy Recycling SRAM Architecture

A Novel Read Circuit for RRAM Based on RC Delay Effect

Low-Power High-Yield Sram Design With Vss Adaptive Boosting And Bl Capacitance Variation Sensing

Column-Selection-Enabled 10T SRAM Utilizing Shared Diff-VDD Write and Dropped-VDD Read for Power Reduction

Improving energy efficiency of write-asymmetric memories by log style write.

A near-threshold SRAM design with transient negative bit-line voltage scheme

A Low Power Localized 2T1R STT-MRAM Array with Pipelined Quad-Phase Saving Scheme for Zero Sleep Power Systems.

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

An energy efficient backup scheme with low inrush current for nonvolatile SRAM in energy harvesting sensor nodes

Exploiting Page Write Pattern for Power Management of Hybrid Dram/Pram Memory System

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM