Modeling of Interconnects and Simulation of ABCD Parameters in Presence of Process Variations

张瑛,杨恒新,车晶,丁可柯
IF: 1.992
2010-01-01
Microelectronics Journal
Abstract:Considering the spactial correlation of interconnect process variations,approximate expressions of electrical parameters were obtained by numerical simulation and fitting,and stochastic interconnect model with distributed parameters was proposed in the presence of process variations.Stochastic differential equation of ABCD parameters was derived and statistical analysis method for ABCD parameters based on Monte Carlo method was presented.Finally,Jarque-Bera test was made for normality and worst-case estimation was given.Experimental results demonstrated that the proposed stochastic model and the statistical analysis method were effective for evaluating transmission performance of interconnects in the presence of process variations.
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