Abstract:For nanotechnology nodes, the feature size is shrunk rapidly, the wire becomes narrow and thin, it leads to high RC parasitic, especially for resistance. The overall system performance are dominated by interconnect rather than device. As such, it is imperative to accurately measure and model interconnect parasitic in order to predict interconnect performance on silicon. Despite many test structures developed in the past to characterize device models and layout effects, only few of them are available for interconnects. Nevertheless, they are either not suitable for real chip implementation or too complicated to be embedded. A compact yet comprehensive test structure to capture all interconnect parasitic in a real chip is needed. To address this problem, this paper describes a set of test structures that can be used to study the timing performance (i.e. propagation delay and crosstalk) of various interconnect configurations. Moreover, an empirical model is developed to estimate the actual RC parasitic. Compared with the state-of-the-art interconnect test structures, the new structure is compact in size and can be easily embedded on die as a parasitic variation monitor. We have validated the proposed structure on a test chip in TSMC 28nm HPM process. Recently, the test structure is further modified to identify the serious interconnect process issues for critical path design using TSMC 7nm FF process.

Characterization and analysis of pattern dependent variation-aware interconnects for a 65nm technology

Modeling and Characterization of On‐Chip Interconnects

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Computational Analysis of Mechanical and Electromigration Reliability Problems

Wideband Circuit Model of Silicon-Based Interconnects Up to 50 GHz

Transfer Functions of On-Chip Global Interconnects Based on Distributed RLCG Interconnects Model

Nanometer Interconnect Test Structure for Modeling of Process Variation

Parameter Characterization Of Silicon-Based Patterned Shield And Patterned Ground Shield Coplanar Waveguides

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

Wafer-Area-Saving Test Structures and Measurement Method for the Characterization of Interconnect Resistance and Capacitance in Nanometer Technologies

Investigations on Delay Interconnect Lines for High-Speed Designs with the Numerical Technique

Investigating the Frequency Dependence Elements of CMOS RFIC Interconnects for Physical Modeling

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

An Accurate Interconnect Test Structure for Parasitic Validation in On-Chip Machine Learning Accelerators

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Modeling And Analysis Of Metal Interconnect Resistance Of Power Ic'S

Accurate Model Of Metal-Insulator-Serniconductor Interconnects

Device Parameter Variations of N-Mosfets with Dog-Bone Layouts in 65nm and 40nm Technologies

Low-cost High-Accuracy Variation Characterization for Nanoscale IC Technologies Via Novel Learning-Based Techniques.