Direct Synthesis of Semiconducting Single‐Walled Carbon Nanotubes Toward High‐Performance Electronics
Peng Liu,Abu Taher Khan,Er‐Xiong Ding,Qiang Zhang,Zhenyu Xu,Xueyin Bai,Nan Wei,Ying Tian,Diao Li,Hua Jiang,Harri Lipsanen,Zhipei Sun,Esko I. Kauppinen
DOI: https://doi.org/10.1002/aelm.202300196
IF: 6.2
2023-05-28
Advanced Electronic Materials
Abstract:A straightforward, continuous, and scalable method to synthesize s‐SWCNTs is developed. High‐purity and individual s‐SWCNTs of small‐diameters distribution (≈1 nm) are produced by gas‐phase synthesis, showing promising electrical properties and potential for electronic device applications. The large‐scale synthesis of high‐purity semiconducting single‐walled carbon nanotubes (s‐SWCNTs) plays a crucial role in fabricating high‐performance and multiapplication‐scenario electronics. This work develops a straightforward, continuous, and scalable method to synthesize high‐purity and individual s‐SWCNTs with small‐diameters distribution (≈1 nm). It is believed that the water and carbon dioxide resulting from the decomposition of isopropanol act as oxidizing agents and selectively etch metallic SWCNTs, hence enhancing the production of s‐SWCNTs. The performance of individual‐SWCNTs field effect transistors confirms the high abundance of s‐SWCNTs, presenting a mean mobility of 376 cm2 V−1 s−1 and a high mobility of 2725 cm2 V−1 s−1 with an on‐current to off‐current (Ion/Ioff) ratio as high as 2.51 × 107. Moreover, thin‐film transistors based on the as‐synthesized SWCNTs exhibit excellent performance with a mean mobility of 9.3 cm2 V−1 s−1 and Ion/Ioff ratio of 1.3× 105, respectively, verifying the enrichment of s‐SWCNTs. This work presents a simple and feasible route for the sustainable synthesis of high‐quality s‐SWCNTs for electronic devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology