Abstract:Mechanical dicing is a critical step in producing electronic chips and devices. Single crystal silicon carbide (SiC) is a vital wafer material in modern electronic chips because of its exceptional physical properties, such as wide bandgap and high breakdown voltage. However, the high hardness of SiC makes it extremely challenging to achieve the dicing quality required for the reliable functioning of electronic chips. The removal characteristics of single crystal SiC in mechanical dicing process remains largely unclear. This work aims to systematically investigate the influences of diamond abrasives in ultrathin blades on the dicing force, chipping size, surface roughness, and material removal of single crystal SiC in mechanical dicing. Experimental results indicate the diamond abrasives considerably affect the chipping formation and the material removal of SiC workpieces by changing the undeformed chip thickness. Theoretical analysis based on the classic brittle-ductile transition model reveals that single crystal SiC can be removed in a ductile-like mode using relatively large abrasive size and low concentration, as long as the undeformed chip thickness is sufficiently smaller than the calculated critical depth of cutting. In addition, the mounting method of single crystal SiC workpieces and the wear characteristics of diamond blades play a crucial role in the removal behaviours and, therefore, the dicing quality. An example was given to demonstrate the feasibility of simultaneously improving the dicing quality and the removal rate via appropriately increasing concentration and reducing sizes of abrasives in ultrathin blades. Ultimately, the findings in this research provide a guideline for further optimization of the dicing tools and parameters for other hard-and-brittle solids.

Experimental Research on UV Laser and High-Pressure Water-Assisted YAG Laser Dicing SiC Wafer

The Experimental Research of Sapphire Dicing by a UV Laser

Good-Quality and High-Efficiency Dicing for Thick LiNbO3 Wafers Using Picosecond Laser Pulses

Simulation and Experimental Research on Water-Jet Guided Laser Cutting Silicon Wafer

Investigation on the Processing Quality of Nanosecond Laser Stealth Dicing for 4H-SiC Wafer

Experimental Research on Water-Jet Guided Laser Processing

Investigation on the crack fracture mode and edge quality in laser dicing of glass-anisotropic silicon double-layer wafer

Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

Experimental Investigation of the Machinability of Single Crystal Silicon in Laser-Assisted Diamond Cutting

Research of sapphire wafer scribing by using UV laser

Experimental research of micromachining silicon by excimer laser ablation in air and under water

Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Experimental Investigation on the Scribing of Sapphire Using Uv Laser

Experimental Investigation on Laser In-Situ Assisted Ultra-Precision Cutting of Fused Silica

Research on the ablation mechanism and feasibility of UV laser drilling to improve the machining quality of 2.5D SiC/SiC composites

Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers

Influence of diamond abrasives on material removal of single crystal SiC in mechanical dicing

Simulation study on physical features of a silicon substrate during stealth dicing with a constrained interpolation profile procedure