Enhanced Magnetoresistance Properties in La0.7−xSmxCa0.3MnO3 Epitaxial Films
Rui Chen,Kin Hong Ip,Xin Huang,Junhong Li,Zhiliang Dong,Men Shao,Min Xu,Weiyi Yang,Tingting Yan,Zhidong Li,Hui Zhang,Ji Ma,Sheng'an Yang,Qingming Chen
DOI: https://doi.org/10.1142/s0217984924504281
2024-01-01
Modern Physics Letters B
Abstract:The electrical and magnetic properties of strongly correlated manganese oxides originate from and depend on the coupling of spin, orbital, lattice and other degrees of freedom, and can also be controlled by external stimuli (such as a magnetic field). Here, the films have been prepared using spin-coating method to determine the role of Jahn–Teller (JT) distortion and double exchange (DE) interaction in electronic transport and magnetoresistance (MR) by magnetic field in La[Formula: see text]SmxCa[Formula: see text]MnO3/SrTiO3(001). The Sm-induced lattice distortion suppresses the metal-insulator transition temperature and increases the films’ resistivity, which is due to the weakening of the DE interaction between Mn[Formula: see text]–O[Formula: see text]–Mn[Formula: see text] ions and the enhancement of the single electron bandwidth. Moreover, the MR can be increased to 96.5% and the AMR can be increased to 66.6% under 1 T magnetic field. These findings indicate the importance of JT distortion in multi-field control of hole-doped perovskite manganites.