Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature
Paolo Perna,Davide Maccariello,Fernando Ajejas,Ruben Guerrero,Laurence Méchin,Stephane Flament,Jacobo Santamaria,Rodolfo Miranda,Julio Camarero
DOI: https://doi.org/10.48550/arXiv.1811.10301
2018-11-26
Materials Science
Abstract:The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in materials depending on the specific system and measuring configuration. Half-metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. Here we report on the ability to induce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxial films, at room temperature (RT). By engineering an extrinsic magnetic anisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR) which leads to, at RT, signal changes much larger than the other contributions such as the colossal magnetoresistance (CMR). The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite based devices for the high-resolution low field magnetic sensors or spintronics.