The colossal magnetoresistance within wide temperature range in LaMnO3 compound
Haochen Wang,Fuxiao Dong,Bojun Zhao,Weishi Tan,Shuai Huang,Kunpeng Su,Lin Yang,Haiou Wang
DOI: https://doi.org/10.1007/s10854-024-13490-8
2024-09-27
Journal of Materials Science Materials in Electronics
Abstract:The microstructure and magnetotransport of LaMnO 3 manganite have been studied. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) at room temperature show that the LaMnO 3 sample has a single-phase orthorhombic structure, and the sample particles and elements are densely and evenly distributed. By studying the temperature dependence of resistivity and magnetoresistance (MR), and the magnetic filed dependence of resistivity, it is found that the resistivity versus temperature curves of LaMnO 3 show three extreme values in the temperature range of 10–390 K. Firstly, the minimum resistivity at about 70 K comes from the spin polarization tunneling effect. Secondly, there is a maximum resistivity near 189 K due to the inhomogeneity of the polycrystalline sample. Finally, the traditional metal to insulator (MI) transition leads to another maximum resistivity near 241 K, where the corresponding temperature is MI transition temperature (T MI ). Moreover, the resistivity of LaMnO 3 exhibits a decline as the external magnetic field being increased, implying the presence of MR. In the region of low temperature (close to the T MI ), the negative MR reaches 14.68 and 45.28% under 1 T and 4 T applied fields, respectively. The coexistence of two kinds of MR mechanisms in LaMnO 3 induced by spin polarization tunneling and Jahn–Teller distortion leads to the enhanced MR within the wide temperature range (10–265 K).
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied